Charge state defect engineering of silicon during ion implantation

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Effects of in situ interventions which alter defect interactions during implantation, and thereby affect the final damage state, have been investigated. Specifically, we examined effects of internal electric fields and charge carrier injection on damage accumulation in Si. First, we implanted H or He ions into diode structures which were either reverse or forward biased during implantation. Second, we implanted B or Si ions into plain Si wafers while illuminating them with UV light. In each case, the overall effect is one of damage reduction. Both the electric field and charge carrier injection effects may be understood as resulting from ... continued below

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7 p.

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Brown, R. A.; Ravi, J.; Erokhin, Y.; Rozgonyi, G. A. & White, C. W. January 1997.

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  • Brown, R. A. North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
  • Ravi, J. North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
  • Erokhin, Y. North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
  • Rozgonyi, G. A. North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
  • White, C. W. Oak Ridge National Lab., TN (United States)

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Description

Effects of in situ interventions which alter defect interactions during implantation, and thereby affect the final damage state, have been investigated. Specifically, we examined effects of internal electric fields and charge carrier injection on damage accumulation in Si. First, we implanted H or He ions into diode structures which were either reverse or forward biased during implantation. Second, we implanted B or Si ions into plain Si wafers while illuminating them with UV light. In each case, the overall effect is one of damage reduction. Both the electric field and charge carrier injection effects may be understood as resulting from changes in defect interactions caused in part by changes to the charge state of defects formed during implantation.

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7 p.

Notes

OSTI as DE97002627

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  • 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996

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  • Other: DE97002627
  • Report No.: CONF-961202--37
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 437770
  • Archival Resource Key: ark:/67531/metadc676087

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  • January 1997

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  • July 25, 2015, 2:20 a.m.

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  • Jan. 25, 2016, 6:52 p.m.

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Brown, R. A.; Ravi, J.; Erokhin, Y.; Rozgonyi, G. A. & White, C. W. Charge state defect engineering of silicon during ion implantation, article, January 1997; Tennessee. (digital.library.unt.edu/ark:/67531/metadc676087/: accessed November 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.