InGaAsSb thermophotovoltaic diode physics evaluation

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The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance ... continued below

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24 p.

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Charache, G.W.; Baldasaro, P.F. & Danielson, L.R. June 1, 1998.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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Description

The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

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24 p.

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OSTI as DE99001580

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  • 40. electronic materials conference, Charlottesville, VA (United States), 24 Jun 1998

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  • Other: DE99001580
  • Report No.: KAPL-P--000087
  • Report No.: K--98081;CONF-9806176--
  • Grant Number: AC12-76SN00052
  • DOI: 10.2172/307844 | External Link
  • Office of Scientific & Technical Information Report Number: 307844
  • Archival Resource Key: ark:/67531/metadc676001

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Creation Date

  • June 1, 1998

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • May 16, 2016, 3:56 p.m.

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Charache, G.W.; Baldasaro, P.F. & Danielson, L.R. InGaAsSb thermophotovoltaic diode physics evaluation, report, June 1, 1998; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc676001/: accessed November 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.