Self-aligned selective emitter plasma-etchback and passivation process for screen-printed silicon solar cells

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Plasma-enhanced chemical vapor deposition (PECVD) is a cost-effective, performance-enhancing technique that can provide surface passivation and produce an effective antireflection coating layer at the same time. To gain the full benefit from improved emitter surface passivation on cell performance, it is necessary to tailor the emitter doping profile so that the emitter is lightly doped between the gridlines, but heavily doped under them. This selectively patterned emitter doping profile has historically been obtained by using expensive photolithographic or screen-printed alignment techniques and multiple high-temperature diffusion steps. We built on a self-aligned emitter etchback technique first described by Spectrolab. We included ... continued below

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10 p.

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Ruby, D.S.; Fleddermann, C.B.; Roy, M. & Narayanan August 1, 1996.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 57 times , with 4 in the last month . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Plasma-enhanced chemical vapor deposition (PECVD) is a cost-effective, performance-enhancing technique that can provide surface passivation and produce an effective antireflection coating layer at the same time. To gain the full benefit from improved emitter surface passivation on cell performance, it is necessary to tailor the emitter doping profile so that the emitter is lightly doped between the gridlines, but heavily doped under them. This selectively patterned emitter doping profile has historically been obtained by using expensive photolithographic or screen-printed alignment techniques and multiple high-temperature diffusion steps. We built on a self-aligned emitter etchback technique first described by Spectrolab. We included PECVD-nitride deposition because the low- recombination emitter produced by the etchback requires good surface passivation for improved cell performance. The nitride also provides a good antireflection coating. We studied whether plasma-etching techniques can use standard screen-printed gridlines at etch masks to form self-aligned, patterned-emitter profiles on multicrystalline (MC-Si) cells from Solarex Corp. This investigation determined that reactive ion etching (RIE) is compatible with using standard, commercial, screen printed gridlines as etch masks to form self- aligned, selectively-doped emitter profiles. This process results in reduced gridline contact resistance when followed by PECVD treatments, an undamaged emitter surface easily passivated by plasma-nitride, and a less heavily doped emitter between gridlines for reduced emitter recombination. This allows for heavier doping beneath the gridlines for even lower contact resistance, reduced contact recombination, and better bulk defect gettering. Our results found improvement of half a percentage point in cell efficiency when the self-aligned emitter etchback was combined with the PECVD-nitride surface passivation treatment.

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10 p.

Notes

OSTI as DE96013900

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  • 6. workshop on the role of impurities and defects in silicon device processing, Snowmass, CO (United States), 11-14 Aug 1996

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  • Other: DE96013900
  • Report No.: SAND--96-1920C
  • Report No.: CONF-9608116--2
  • Office of Scientific & Technical Information Report Number: 368373
  • Archival Resource Key: ark:/67531/metadc675952

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  • August 1, 1996

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • April 14, 2016, 6:46 p.m.

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Ruby, D.S.; Fleddermann, C.B.; Roy, M. & Narayanan. Self-aligned selective emitter plasma-etchback and passivation process for screen-printed silicon solar cells, article, August 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc675952/: accessed December 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.