In-situ monitoring of GaSb, GaInAsSb, and AlGaAsSb

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Description

Suitability of silicon photodiode detector arrays for monitoring the spectral reflectance during epitaxial growths of GaSb, AlGaAsSb, and GaInAsSb, which have cutoff wavelengths of 1.7, 1.2, and 2.3 {micro}m, respectively, is demonstrated. These alloys were grown lattice matched to GaSb in a vertical rotating-disk reactor, which was modified to accommodate near normal reflectance without affecting epilayer uniformity. By using a virtual interface model, the growth rate and complex refractive index at the growth temperature are extracted for these alloys over the 600 to 950 nm spectral range. Excellent agreement is obtained between the extracted growth rate and that determined by ... continued below

Physical Description

22 p.

Creation Information

Vineis, C.J.; Wang, C.A.; Jensen, K.F. & Breiland, W.G. June 1, 1998.

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Authors

  • Vineis, C.J. Massachusetts Inst. of Tech., Cambridge, MA (United States). Dept. of Materials Science and Engineering
  • Wang, C.A. Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.
  • Jensen, K.F. Massachusetts Inst. of Tech., Cambridge, MA (United States)
  • Breiland, W.G. Sandia National Labs., Albuquerque, NM (United States)

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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Description

Suitability of silicon photodiode detector arrays for monitoring the spectral reflectance during epitaxial growths of GaSb, AlGaAsSb, and GaInAsSb, which have cutoff wavelengths of 1.7, 1.2, and 2.3 {micro}m, respectively, is demonstrated. These alloys were grown lattice matched to GaSb in a vertical rotating-disk reactor, which was modified to accommodate near normal reflectance without affecting epilayer uniformity. By using a virtual interface model, the growth rate and complex refractive index at the growth temperature are extracted for these alloys over the 600 to 950 nm spectral range. Excellent agreement is obtained between the extracted growth rate and that determined by ex-situ measurement. Optical constants are compared to theoretical predictions based on an existing dielectric function model for these materials. Furthermore, quantitative analysis of the entire reflectance spectrum yields valuable information on the approximate thickness of overlayers on the pregrowth substrate.

Physical Description

22 p.

Notes

OSTI as DE99001574

Source

  • 9. international conference on MOVPE, La Jolla, CA (United States), 30 May - 4 Jun 1998

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  • Other: DE99001574
  • Report No.: KAPL-P--000081
  • Report No.: K--98071;CONF-9805146--
  • Grant Number: AC12-76SN00052
  • DOI: 10.2172/307976 | External Link
  • Office of Scientific & Technical Information Report Number: 307976
  • Archival Resource Key: ark:/67531/metadc675905

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Creation Date

  • June 1, 1998

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

Description Last Updated

  • May 16, 2016, 3:55 p.m.

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Vineis, C.J.; Wang, C.A.; Jensen, K.F. & Breiland, W.G. In-situ monitoring of GaSb, GaInAsSb, and AlGaAsSb, report, June 1, 1998; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc675905/: accessed December 14, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.