Highly uniform and reproducible visible to near-infrared vertical-cavity surface-emitting lasers grown by MOVPE

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The authors present the growth and characterization of vertical-cavity surface emitting lasers (VCSELs) from visible to near-infrared wavelength grown by metalorganic vapor phase epitaxy. Discussions on the growth issue of VCSEL materials include the control on growth rate and composition using an in situ normal-incidence reflectometer, optimization of ultra-high material uniformity, and comprehensive p- and n-type doping study in AlGaAs by CCl{sub 4} and Si{sub 2}H{sub 6} over the entire Al composition range. They will also demonstrate the recent achievements of selectively-oxidized VCSELs which include the first room-temperature continuous-wave demonstration of all-AlGaAs 700-nm red VCSELs, high-performance n-side up 850-nm VCSELs, ... continued below

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13 p.

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Hou, H.Q.; Choquette, K.D.; Hammons, B.E.; Breiland, W.G.; Crawford, M.H. & Lear, K.L. May 1, 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The authors present the growth and characterization of vertical-cavity surface emitting lasers (VCSELs) from visible to near-infrared wavelength grown by metalorganic vapor phase epitaxy. Discussions on the growth issue of VCSEL materials include the control on growth rate and composition using an in situ normal-incidence reflectometer, optimization of ultra-high material uniformity, and comprehensive p- and n-type doping study in AlGaAs by CCl{sub 4} and Si{sub 2}H{sub 6} over the entire Al composition range. They will also demonstrate the recent achievements of selectively-oxidized VCSELs which include the first room-temperature continuous-wave demonstration of all-AlGaAs 700-nm red VCSELs, high-performance n-side up 850-nm VCSELs, and low threshold current and low-threshold voltage 1.06 {micro}m VCSELs using InGaAs/GaAsP strain-compensated quantum wells.

Physical Description

13 p.

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OSTI as DE97005383

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  • SPIE international symposium, San Jose, CA (United States), 8-14 Feb 1997

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  • Other: DE97005383
  • Report No.: SAND--97-0967C
  • Report No.: CONF-970231--31
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 474940
  • Archival Resource Key: ark:/67531/metadc675886

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  • May 1, 1997

Added to The UNT Digital Library

  • July 25, 2015, 2:21 a.m.

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  • April 14, 2016, 4:02 p.m.

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Hou, H.Q.; Choquette, K.D.; Hammons, B.E.; Breiland, W.G.; Crawford, M.H. & Lear, K.L. Highly uniform and reproducible visible to near-infrared vertical-cavity surface-emitting lasers grown by MOVPE, article, May 1, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc675886/: accessed August 14, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.