Interfaces in InAsSb/InGaAs strained-layer superlattices grown by MOCVD for use in infrared emitters

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Description

The authors have prepared InAsSb/InGaAs strained-layer superlattices (SLSs) using metal-organic chemical vapor deposition (MOCVD). X-ray diffraction was used to determine lattice matching as well as composition and structure of the SLS`s. The presence of an InGaAsSb interface layer was indicated by x-ray diffraction for samples grown under non-optimized conditions. Interfacial layers were also identified with transmission electron microscopy (TEM). Two types of interfaces were observed by TEM. The different contrasts observed by TEM could be due to a difference in composition at the interfaces. The width of the x-ray peaks can be explained by a variation of the layer thickness.

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6 p.

Creation Information

Biefeld, R.M.; Follstaedt, D.M.; Kurtz, S.R. & Baucom, K.C. February 1, 1995.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The authors have prepared InAsSb/InGaAs strained-layer superlattices (SLSs) using metal-organic chemical vapor deposition (MOCVD). X-ray diffraction was used to determine lattice matching as well as composition and structure of the SLS`s. The presence of an InGaAsSb interface layer was indicated by x-ray diffraction for samples grown under non-optimized conditions. Interfacial layers were also identified with transmission electron microscopy (TEM). Two types of interfaces were observed by TEM. The different contrasts observed by TEM could be due to a difference in composition at the interfaces. The width of the x-ray peaks can be explained by a variation of the layer thickness.

Physical Description

6 p.

Notes

OSTI as DE95006323

Source

  • International conference on narrow gap semiconductors, Santa Fe, NM (United States), 9-12 Jan 1995

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  • Other: DE95006323
  • Report No.: SAND--94-2292C
  • Report No.: CONF-950167--3
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/34404 | External Link
  • Office of Scientific & Technical Information Report Number: 34404
  • Archival Resource Key: ark:/67531/metadc675580

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  • February 1, 1995

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • April 13, 2016, 2:39 p.m.

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Biefeld, R.M.; Follstaedt, D.M.; Kurtz, S.R. & Baucom, K.C. Interfaces in InAsSb/InGaAs strained-layer superlattices grown by MOCVD for use in infrared emitters, report, February 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc675580/: accessed April 24, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.