A new approach to nuclear microscopy: The ion-electron emission microscope

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A new multidimensional high lateral resolution ion beam analysis technique, Ion-Electron Emission Microscopy or IEEM is described. Using MeV energy ions, IEEM is shown to be capable of Ion Beam Induced Charge Collection (IBICC) measurements in semiconductors. IEEM should also be capable of microscopically and multidimensionally mapping the surface and bulk composition of solids. As such, IIEM has nearly identical capabilities as traditional nuclear microprobe analysis, with the advantage that the ion beam does not have to be focused. The technique is based on determining the position where an individual ion enters the surface of the sample by projection secondary ... continued below

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25 p.

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Doyle, B.L.; Vizkelethy, G.; Walsh, D.S.; Senftinger, B. & Mellon, M. November 1, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

A new multidimensional high lateral resolution ion beam analysis technique, Ion-Electron Emission Microscopy or IEEM is described. Using MeV energy ions, IEEM is shown to be capable of Ion Beam Induced Charge Collection (IBICC) measurements in semiconductors. IEEM should also be capable of microscopically and multidimensionally mapping the surface and bulk composition of solids. As such, IIEM has nearly identical capabilities as traditional nuclear microprobe analysis, with the advantage that the ion beam does not have to be focused. The technique is based on determining the position where an individual ion enters the surface of the sample by projection secondary electron emission microscopy. The x-y origination point of a secondary electron, and hence the impact coordinates of the corresponding incident ion, is recorded with a position sensitive detector connected to a standard photoemission electron microscope (PEEM). These signals are then used to establish coincidence with IBICC, atomic, or nuclear reaction induced ion beam analysis signals simultaneously caused by the incident ion.

Physical Description

25 p.

Notes

INIS; OSTI as DE99000588

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  • 6. international conference on nuclear microprobe technology and applications, Spier Estate (South Africa), 11-16 Oct 1998

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  • Other: DE99000588
  • Report No.: SAND--98-2133C
  • Report No.: CONF-981046--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 290842
  • Archival Resource Key: ark:/67531/metadc675198

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  • November 1, 1998

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • April 13, 2016, 4:03 p.m.

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Doyle, B.L.; Vizkelethy, G.; Walsh, D.S.; Senftinger, B. & Mellon, M. A new approach to nuclear microscopy: The ion-electron emission microscope, article, November 1, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc675198/: accessed July 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.