A novel approach for the improvement of open circuit voltage and fill factor of InGaAsSb/GaSb thermophotovoltaic cells

PDF Version Also Available for Download.

Description

Heterojunction n-Al{sub 0.25}Ga{sub 0.75}As{sub 0.02}Sb{sub 098}/p-In{sub 0.16}Ga{sub 0.84}As{sub 0.04}Sb{sub 0.96} thermophotovoltaic (TPV) cells were grown by molecular-beam epitaxy on n-GaSb-substrates. In the spectral range from 1 {micro}m to 2.1 {micro}m these cells, as well as homojunction n-p-In{sub 0.16}Ga{sub 0.84}As{sub 0.04}Sb{sub 0.96} cells, have demonstrated internal quantum efficiencies exceeding 80%, despite about a 200 meV barrier in the conduction band at the heterointerface. Estimation shows that the thermal emission of the electrons photogenerated in p-region over this barrier can provide high efficiency for hetero-cells if the electron recombination time in p-In{sub 0.16}Ga{sub 0.84}As{sub 0.04}Sb{sub 0.96}is longer than 10 ns. Keeping the ... continued below

Physical Description

11 p.

Creation Information

Garbuzov, D.Z.; Martinelli, R.U.; Khalfin, V.; Lee, H.; Morris, N.A.; Taylor, G.C. et al. October 1, 1997.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Authors

Sponsor

Publisher

  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Heterojunction n-Al{sub 0.25}Ga{sub 0.75}As{sub 0.02}Sb{sub 098}/p-In{sub 0.16}Ga{sub 0.84}As{sub 0.04}Sb{sub 0.96} thermophotovoltaic (TPV) cells were grown by molecular-beam epitaxy on n-GaSb-substrates. In the spectral range from 1 {micro}m to 2.1 {micro}m these cells, as well as homojunction n-p-In{sub 0.16}Ga{sub 0.84}As{sub 0.04}Sb{sub 0.96} cells, have demonstrated internal quantum efficiencies exceeding 80%, despite about a 200 meV barrier in the conduction band at the heterointerface. Estimation shows that the thermal emission of the electrons photogenerated in p-region over this barrier can provide high efficiency for hetero-cells if the electron recombination time in p-In{sub 0.16}Ga{sub 0.84}As{sub 0.04}Sb{sub 0.96}is longer than 10 ns. Keeping the same internal efficiency as homojunction cells, hetero-cells provide a unique opportunity to decrease the dark forward current and thereby increase open circuit voltage (V{sub {proportional_to}}) and fill factor at a given illumination level. It is shown that the decrease of the forward current in hetero-cells is due to the lower recombination rate in n-type wider-bandgap space-charge region and to the suppression of the hole component of the forward current. The improvement in V{sub {proportional_to}} reaches 100% at illumination level equivalent to 1 mA/cm{sup 2} and it decreases to 5% at the highest illumination levels (2--3 A/cm{sup 2}), where the electron current component dominates in both the homo- and heterojunction cells. Values of V{sub {proportional_to}} as high as 310 meV have been obtained for a hetero-cell at illumination levels of 3 A/cm{sup 2}. Under this condition, the expected fill factor value is about 72% for a hetero-cell with improved series resistance. The heterojunction concept provides excellent prospects for further reduction of the dark forward current in TPV cells.

Physical Description

11 p.

Notes

OSTI as DE99002104

Source

  • Space technology and applications international forum, Albuquerque, NM (United States), 25-29 Jan 1998

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE99002104
  • Report No.: KAPL-P--000192
  • Report No.: K--97117;CONF-980103--
  • Grant Number: AC12-76SN00052
  • Office of Scientific & Technical Information Report Number: 329557
  • Archival Resource Key: ark:/67531/metadc674999

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • October 1, 1997

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

Description Last Updated

  • May 16, 2016, 6:30 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 6

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Garbuzov, D.Z.; Martinelli, R.U.; Khalfin, V.; Lee, H.; Morris, N.A.; Taylor, G.C. et al. A novel approach for the improvement of open circuit voltage and fill factor of InGaAsSb/GaSb thermophotovoltaic cells, article, October 1, 1997; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc674999/: accessed December 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.