Resonance ionization of sputtered atoms: quantitative analysis in the near-surface region of silicon wafers

PDF Version Also Available for Download.

Description

Identification, measurements of low levels of metallic impurities on Si wafers are difficult due to rapidly changing chemical activity near the surface. Air-exposed Si surfaces typically possess a native oxide layer several atoms thick plus a top monolayer of various Si- containing molecules. Resonance ionization spectroscopy (RIS) used for postionization in secondary neutral mass spectrometry (SNMS) is uniquely suited to this task; the high sensitivity allows detection of metals at parts per billion levels with monolayer sensitivity. The high selectivity of RIS allows unambiguous identification of elements, while the reduced matrix effects of SNMS allow quantification of the photoionized elements. ... continued below

Physical Description

5 p.

Creation Information

Calaway, W.F.; Pellin, M.J.; Spiegel, D.R.; Marshall, A.H. & Downey, S.W. December 31, 1996.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Authors

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Identification, measurements of low levels of metallic impurities on Si wafers are difficult due to rapidly changing chemical activity near the surface. Air-exposed Si surfaces typically possess a native oxide layer several atoms thick plus a top monolayer of various Si- containing molecules. Resonance ionization spectroscopy (RIS) used for postionization in secondary neutral mass spectrometry (SNMS) is uniquely suited to this task; the high sensitivity allows detection of metals at parts per billion levels with monolayer sensitivity. The high selectivity of RIS allows unambiguous identification of elements, while the reduced matrix effects of SNMS allow quantification of the photoionized elements. Characterization of Si surfaces using RIS/SNMS was explored by measuring the concentration profiles of Ca in the near-surface region of Si wafers of varying degrees of cleanliness. Ca detection can be problematic due to isobaric interference with SiC, particularly in the near-surface region during fabrication of devices due to use of organic photoresist. Three different resonance ionizations schemes for Ca were examined and compared for effectiveness by calculating detection limits for Ca in Si in the chemically active near-surface region.

Physical Description

5 p.

Notes

OSTI as DE97003899

Source

  • 14. international conference on the application of accelerators in research and industry, Denton, TX (United States), 6-9 Nov 1996

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE97003899
  • Report No.: ANL/CHM/CP--90671
  • Report No.: CONF-961110--27
  • Grant Number: W-31109-ENG-38
  • Office of Scientific & Technical Information Report Number: 464488
  • Archival Resource Key: ark:/67531/metadc674990

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • December 31, 1996

Added to The UNT Digital Library

  • July 25, 2015, 2:21 a.m.

Description Last Updated

  • Dec. 16, 2015, 5:17 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 1
Total Uses: 4

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Calaway, W.F.; Pellin, M.J.; Spiegel, D.R.; Marshall, A.H. & Downey, S.W. Resonance ionization of sputtered atoms: quantitative analysis in the near-surface region of silicon wafers, article, December 31, 1996; Illinois. (digital.library.unt.edu/ark:/67531/metadc674990/: accessed May 24, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.