A Nonvolatile MOSFET Memory Device Based on Mobile Protons in SiO(2) Thin Films

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It is shown how mobile H{sup +} ions can be generated thermally inside the oxide layer of Si/SiO{sub 2}/Si structures. The technique involves only standard silicon processing steps: the nonvolatile field effect transistor (NVFET) is based on a standard MOSFET with thermally grown SiO{sub 2} capped with a poly-silicon layer. The capped thermal oxide receives an anneal at {approximately}1100 C that enables the incorporation of the mobile protons into the gate oxide. The introduction of the protons is achieved by a subsequent 500-800 C anneal in a hydrogen-containing ambient, such as forming gas (N{sub 2}:H{sub 2} 95:5). The mobile protons ... continued below

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31 p.

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Vanheusden, K.; Warren, W.L.; Devine, R.A.B.; Fleetwood, D.M.; Draper, B.L. & Schwank, J.R. March 2, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

It is shown how mobile H{sup +} ions can be generated thermally inside the oxide layer of Si/SiO{sub 2}/Si structures. The technique involves only standard silicon processing steps: the nonvolatile field effect transistor (NVFET) is based on a standard MOSFET with thermally grown SiO{sub 2} capped with a poly-silicon layer. The capped thermal oxide receives an anneal at {approximately}1100 C that enables the incorporation of the mobile protons into the gate oxide. The introduction of the protons is achieved by a subsequent 500-800 C anneal in a hydrogen-containing ambient, such as forming gas (N{sub 2}:H{sub 2} 95:5). The mobile protons are stable and entrapped inside the oxide layer, and unlike alkali ions, their space-charge distribution can be controlled and rapidly rearranged at room temperature by an applied electric field. Using this principle, a standard MOS transistor can be converted into a nonvolatile memory transistor that can be switched between normally on and normally off. Switching speed, retention, endurance, and radiation tolerance data are presented showing that this non-volatile memory technology can be competitive with existing Si-based non-volatile memory technologies such as the floating gate technologies (e.g. Flash memory).

Physical Description

31 p.

Notes

OSTI as DE00004180

Medium: P; Size: 31 pages

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  • Journal Name: Journal of Non-Crystalline Solids; Other Information: Submitted to Journal of Non-Crystalline Solids

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  • Report No.: SAND99-0531J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 4180
  • Archival Resource Key: ark:/67531/metadc674911

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • March 2, 1999

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

Description Last Updated

  • April 12, 2017, 1:11 p.m.

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Vanheusden, K.; Warren, W.L.; Devine, R.A.B.; Fleetwood, D.M.; Draper, B.L. & Schwank, J.R. A Nonvolatile MOSFET Memory Device Based on Mobile Protons in SiO(2) Thin Films, article, March 2, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc674911/: accessed November 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.