Effect of 690 keV Xe ion irradiation on the microstructure of amorphous MoSi{sub 2}/SiC nanolayer composites

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The effect of 690 keV Xe ion irradiation at three different dosage levels, 1, 5 and 10{times}10{sup 15}/cm{sup 2}, on the microstructure of amorphous-MoSi{sub 2}/amorphous-SiC nanolayer composites has been studied using transmission electron microscopy. Results show that the depth of radiation damage in this multilayer material is {approximately}80 nm, which agrees qualitatively well with the calculated damage depth calculated by TRIM. A diffraction ring corresponding to the (10{bar 1}1) plane of C40 MoSi{sub 2} was found in the electron diffraction pattern taken from the irradiated regions; the C40 phase is also found after thermal annealing of amorphous MoSi{sub 2} at ... continued below

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11 p.

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Lu, Y.C.; Kung, H.; Jervis, T.R.; Mitchell, T.E. & Nastasi, M. October 1, 1996.

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The effect of 690 keV Xe ion irradiation at three different dosage levels, 1, 5 and 10{times}10{sup 15}/cm{sup 2}, on the microstructure of amorphous-MoSi{sub 2}/amorphous-SiC nanolayer composites has been studied using transmission electron microscopy. Results show that the depth of radiation damage in this multilayer material is {approximately}80 nm, which agrees qualitatively well with the calculated damage depth calculated by TRIM. A diffraction ring corresponding to the (10{bar 1}1) plane of C40 MoSi{sub 2} was found in the electron diffraction pattern taken from the irradiated regions; the C40 phase is also found after thermal annealing of amorphous MoSi{sub 2} at 500{degrees}C or above. In the damaged regions SiC layers were found to spherodize while the nanocrystalline grains in the MoSi{sub 2} layers appeared to coarsen with increasing dose.

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11 p.

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OSTI as DE97000122

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  • IBMM `96: 10. international conference on ion beam modification of materials, Albuquerque, NM (United States), 1-6 Sep 1996

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  • Other: DE97000122
  • Report No.: LA-UR--96-3092
  • Report No.: CONF-960994--10
  • Grant Number: W-7405-ENG-36
  • Office of Scientific & Technical Information Report Number: 380362
  • Archival Resource Key: ark:/67531/metadc674678

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  • October 1, 1996

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  • July 25, 2015, 2:20 a.m.

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  • Feb. 25, 2016, 4:10 p.m.

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Lu, Y.C.; Kung, H.; Jervis, T.R.; Mitchell, T.E. & Nastasi, M. Effect of 690 keV Xe ion irradiation on the microstructure of amorphous MoSi{sub 2}/SiC nanolayer composites, article, October 1, 1996; New Mexico. (digital.library.unt.edu/ark:/67531/metadc674678/: accessed November 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.