Effect of oxidations on phosphorus-diffused crystalline-silicon substrates

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Phosphorus diffusions are used in the fabrication process for nearly all crystalline-silicon (c-Si) photovoltaic solar cells to form the emitter of the solar cell. These phosphorous diffusions are also well known to have beneficial gettering benefits, i.e., deleterious metallic impurities are gettered from the bulk of the c-Si substrate into the phosphorous doped layer. In this study, we examined the effect of oxidations performed after the phosphorus diffusion. We were particularly interested in using the oxidation to passivate the surface of the phosphorus diffusion. Post-diffusion oxidations or moderate temperature steps in oxidizing ambients are also commonly found in commercial fabrication ... continued below

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3 p.

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Gee, J.M.; King, R.R.; Reiss, J.H. & Mitchell, K.W. September 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Phosphorus diffusions are used in the fabrication process for nearly all crystalline-silicon (c-Si) photovoltaic solar cells to form the emitter of the solar cell. These phosphorous diffusions are also well known to have beneficial gettering benefits, i.e., deleterious metallic impurities are gettered from the bulk of the c-Si substrate into the phosphorous doped layer. In this study, we examined the effect of oxidations performed after the phosphorus diffusion. We were particularly interested in using the oxidation to passivate the surface of the phosphorus diffusion. Post-diffusion oxidations or moderate temperature steps in oxidizing ambients are also commonly found in commercial fabrication sequences of c-Si solar cells. we found that the bulk lifetime was degraded in Czochralski (Cz) silicon due to the post-diffusion oxidation unless there was a gettering agent present during the oxidation. Possible explanations for these results are presented at the end of the paper.

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3 p.

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OSTI as DE96013236

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  • 6. workshop on the role of impurities and defects in silicon device processing, Snowmass, CO (United States), 11-14 Aug 1996

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  • Other: DE96013236
  • Report No.: SAND--96-1919C
  • Report No.: CONF-9608116--1
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 374110
  • Archival Resource Key: ark:/67531/metadc674559

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  • September 1, 1996

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  • July 25, 2015, 2:20 a.m.

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  • April 14, 2016, 7:37 p.m.

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Gee, J.M.; King, R.R.; Reiss, J.H. & Mitchell, K.W. Effect of oxidations on phosphorus-diffused crystalline-silicon substrates, article, September 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc674559/: accessed September 25, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.