Ion-implanted GaAs JFETs with f{sub t} {gt} 45 GHz for low-power electronics

PDF Version Also Available for Download.

Description

GaAs Junction Field Effect Transistors (JFETs) are reported with gate lengths down to 0.3 micrometers. The structure is fully self-aligned and employs all ion implantation doping. p[sup +]-gate regions are formed with either Zn or Cd implants along with a P coimplantation to reduce diffusion. The source and rain implants are engineered with Si or SiF implants to minimize short channel effects. JFETs with 0.3 micrometer gate length are demonstrated with a sub-threshold slope of 110 mV/decade along with an intrinsic unity current gain cutoff frequency as high as 52 GHz.

Physical Description

4 p.

Creation Information

Zolper, J.C.; Baca, A.G.; Hietala, V.M.; Shul, R.J. & Sherwin, M.E. December 31, 1996.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 34 times . More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Authors

Sponsor

Publisher

  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

GaAs Junction Field Effect Transistors (JFETs) are reported with gate lengths down to 0.3 micrometers. The structure is fully self-aligned and employs all ion implantation doping. p[sup +]-gate regions are formed with either Zn or Cd implants along with a P coimplantation to reduce diffusion. The source and rain implants are engineered with Si or SiF implants to minimize short channel effects. JFETs with 0.3 micrometer gate length are demonstrated with a sub-threshold slope of 110 mV/decade along with an intrinsic unity current gain cutoff frequency as high as 52 GHz.

Physical Description

4 p.

Notes

OSTI as DE97000743

Source

  • IEEE gallium arsenide integrated circuit symposium: IC in GaAs, InP, and other compound semiconductors, Orlando, FL (United States), 3-6 Nov 1996

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE97000743
  • Report No.: SAND--96-2493C
  • Report No.: CONF-961127--1
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 460770
  • Archival Resource Key: ark:/67531/metadc674502

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • December 31, 1996

Added to The UNT Digital Library

  • July 25, 2015, 2:21 a.m.

Description Last Updated

  • May 5, 2016, 8:07 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 2
Total Uses: 34

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Zolper, J.C.; Baca, A.G.; Hietala, V.M.; Shul, R.J. & Sherwin, M.E. Ion-implanted GaAs JFETs with f{sub t} {gt} 45 GHz for low-power electronics, article, December 31, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc674502/: accessed May 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.