Stress relaxation of silicon nitride at elevated temperatures

PDF Version Also Available for Download.

Description

The stress relaxation behavior of SN88, SN253, and NCX-5102 silicon nitride materials were experimentally determined in tension at 1300{degrees}C using buttonhead specimens. Specimens were held at constant strain after being loaded at 10 MPa/s to an initial stress of 276 MPa (40 ksi) or 414 MPa (60 ksi). The subsequent decay in tensile stress was measured as a function of time. A non-negative least squares algorithm used in conjunction with a generalized Maxwell model proved to be an efficient means to define characteristic relaxation modulus spectra and stress relaxation behavior. In the last part of this study, the utility of ... continued below

Physical Description

10 p.

Creation Information

Wereszczak, A.A.; Ferber, M.K.; Kirkland, T.P.; Lara-Curzio, E.; Parthasarathy, V. & Gribb, T.T. April 1, 1995.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Authors

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

The stress relaxation behavior of SN88, SN253, and NCX-5102 silicon nitride materials were experimentally determined in tension at 1300{degrees}C using buttonhead specimens. Specimens were held at constant strain after being loaded at 10 MPa/s to an initial stress of 276 MPa (40 ksi) or 414 MPa (60 ksi). The subsequent decay in tensile stress was measured as a function of time. A non-negative least squares algorithm used in conjunction with a generalized Maxwell model proved to be an efficient means to define characteristic relaxation modulus spectra and stress relaxation behavior. In the last part of this study, the utility of using short-term stress relaxation testing to predict long-term creep performance was examined.

Physical Description

10 p.

Notes

OSTI as DE95009177

Source

  • 19. annual conference on advanced ceramics, materials and structures, Cocoa Beach, FL (United States), 9-12 Jan 1995

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE95009177
  • Report No.: CONF-950129--4
  • Grant Number: AC05-84OR21400
  • Office of Scientific & Technical Information Report Number: 42451
  • Archival Resource Key: ark:/67531/metadc674406

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • April 1, 1995

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

Description Last Updated

  • Jan. 22, 2016, 4:45 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 3

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Wereszczak, A.A.; Ferber, M.K.; Kirkland, T.P.; Lara-Curzio, E.; Parthasarathy, V. & Gribb, T.T. Stress relaxation of silicon nitride at elevated temperatures, article, April 1, 1995; Tennessee. (digital.library.unt.edu/ark:/67531/metadc674406/: accessed November 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.