Quantum cascade light emitting diodes based on type-II quantum wells Metadata

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Title

  • Main Title Quantum cascade light emitting diodes based on type-II quantum wells

Creator

  • Author: Lin, C. H.
    Creator Type: Personal
  • Author: Yang, R. Q.
    Creator Type: Personal
  • Author: Zhang, D.
    Creator Type: Personal
  • Author: Murry, S. J.
    Creator Type: Personal
  • Author: Pei, S. S.
    Creator Type: Personal
    Creator Info: Univ. of Houston, TX (United States). Space Vacuum Epitaxy Center
  • Author: Allerman, A. A.
    Creator Type: Personal
  • Author: Kurtz, S. R.
    Creator Type: Personal
    Creator Info: Sandia National Labs., Albuquerque, NM (United States)

Contributor

  • Sponsor: United States. Department of Energy. Office of Financial Management and Controller.
    Contributor Type: Organization
    Contributor Info: USDOE Office of Financial Management and Controller, Washington, DC (United States)
  • Sponsor: United States. National Aeronautics and Space Administration.
    Contributor Type: Organization
    Contributor Info: National Aeronautics and Space Administration, Washington, DC (United States)

Publisher

  • Name: Sandia National Laboratories
    Place of Publication: Albuquerque, New Mexico
    Additional Info: Sandia National Labs., Albuquerque, NM (United States)

Date

  • Creation: 1997-01-21

Language

  • English

Description

  • Content Description: The authors have demonstrated room-temperature CW operation of type-II quantum cascade (QC) light emitting diodes at 4.2 {micro}m using InAs/InGaSb/InAlSb type-II quantum wells. The type-II QC configuration utilizes sequential multiple photon emissions in a staircase of coupled type-II quantum wells. The device was grown by molecular beam epitaxy on a p-type GaSb substrate and was compared of 20 periods of active regions separated by digitally graded quantum well injection regions. The maximum average output power is about 250 {micro}W at 80 K, and 140 {micro}W at 300 K at a repetition rate of 1 kHz with a duty cycle of 50%.
  • Physical Description: 9 p.

Subject

  • Keyword: Ambient Temperature
  • Keyword: Infrared Radiation
  • Keyword: Electroluminescence
  • Keyword: Molecular Beam Epitaxy
  • Keyword: Performance
  • Keyword: Heterojunctions
  • Keyword: Operation
  • Keyword: Light Emitting Diodes
  • STI Subject Categories: 42 Engineering Not Included In Other Categories
  • Keyword: Substrates

Source

  • Conference: SPIE international symposium, San Jose, CA (United States), 8-14 Feb 1997

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Other: DE97003207
  • Report No.: SAND--97-0347C
  • Report No.: CONF-970231--6
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 459395
  • Archival Resource Key: ark:/67531/metadc674274

Note

  • Display Note: OSTI as DE97003207