Quantum cascade light emitting diodes based on type-II quantum wells Page: 1 of 9
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Quantum Cascade Light Emitting Diodes Based on Type-I
Chih-Hsiang Lin, Rui Q. Yang, D, Zhang, S. J. Muuy and S. S. Pei FEic 2 27
Space Vacuum Epitaxy Center, Uni'versity of Houston, TX 77204-5507
A. A. Allerman and S. R Kurtz
Sandia National Laboratories, Albuquerque, NM 87123-0603
We have demonstrated room-temperature CW operation of type-fl quantum cascade (QC) light
emitting diodes at 4.2 Am using InAs/1n(GaSb/InAiSb type-II quantum wells. The type-11 QC
configuration utilizes sequential multiple photon emissions in a staircase of coupled type-II quantum
wells. The device was grown by molecular beam epitaxy on a p-type GaSb substrate and was composed
of 20 periods of active regions separated by digitally graded quantum well injection regions. The
maximum average output power is about 250 pW at 80 K, and 140 W at 300 K at a repetition rate of 1
kHz with a duty cycle of 50%.
Keywords: MBE, Mid-IR, Infrared, quantum well, type-if quantum well, quantum cascade, laser
1.INTRODUCTION MA TER
Mid-infrared (MIR) lasers emitting from 3 to 5 lam have important applications in infrared (IR)
countermeastues, IR lidar, remote sensing, and environmental monitoring such as detection of trace
gases, hydrocarbon fuel emission, and other common pollutants. However, both military and commercial
MIR systems are limited due to a lack of adequate sources. Currently, MJR solid state lasers tend to be
bulky with little wavelength agility, while optical parametric oscillators (which use a nonlinear crytal to
down convert or up convert the output wavelength of pump sources) are complex and expensive.
Semiconductor diodes lasers have significant advantages in terms of cost, volume, weight, relaibility,
power dissipation, and manufacture, The availability of compact high-power MIL semiconductor diode
lasers operating at ambient or thermo-electrically cooled temperatures would significantly enhance the
capability of current MIR technology.
I'VI Lead-salt lasers emitting at wavelengths longer than 3 m have been available for a number of
years. These lasers with emission wavelengths of 4 pm have exhibited pulsed operation at temperatures
up to 290 K [11, and cw operation up to 223 K . However, they are not expected to produce high
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Lin, C. H.; Yang, R. Q.; Zhang, D.; Murry, S. J.; Pei, S. S.; Allerman, A. A. et al. Quantum cascade light emitting diodes based on type-II quantum wells, article, January 21, 1997; Albuquerque, New Mexico. (https://digital.library.unt.edu/ark:/67531/metadc674274/m1/1/: accessed April 20, 2019), University of North Texas Libraries, Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.