Beam induced rf cavity transient voltage

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The authors calculate the transient voltage induced in a radio frequency cavity by the injection of a relativistic bunched beam into a circular accelerator. A simplified model of the beam induced voltage, using a single tone current signal, is generated and compared with the voltage induced by a more realistic model of a point-like bunched beam. The high Q limit of the bunched beam model is shown to be related simply to the simplified model. Both models are shown to induce voltages at the resonant frequency {omega}{sub r} of the cavity and at an integer multiple of the bunch revolution ... continued below

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9 p.

Creation Information

Kramer, S. L. & Wang, J. M. October 1, 1998.

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Description

The authors calculate the transient voltage induced in a radio frequency cavity by the injection of a relativistic bunched beam into a circular accelerator. A simplified model of the beam induced voltage, using a single tone current signal, is generated and compared with the voltage induced by a more realistic model of a point-like bunched beam. The high Q limit of the bunched beam model is shown to be related simply to the simplified model. Both models are shown to induce voltages at the resonant frequency {omega}{sub r} of the cavity and at an integer multiple of the bunch revolution frequency (i.e. the accelerating frequency for powered cavity operation) h{omega}{sub {omicron}}. The presence of two nearby frequencies in the cavity leads to a modulation of the carrier wave exp(h{omega}{sub {omicron}}t). A special emphasis is placed in this paper on studying the modulation function. These models prove useful for computing the transient voltage induced in superconducting rf cavities, which was the motivation behind this research. The modulation of the transient cavity voltage discussed in this paper is the physical basis of the recently observed and explained new kinds of longitudinal rigid dipole mode which differs from the conventional Robinson mode.

Physical Description

9 p.

Notes

INIS; OSTI as DE99001530

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  • Other Information: PBD: Oct 1998

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  • Other: DE99001530
  • Report No.: BNL--64886-98/10-Rev.
  • Grant Number: AC02-98CH10886
  • DOI: 10.2172/307890 | External Link
  • Office of Scientific & Technical Information Report Number: 307890
  • Archival Resource Key: ark:/67531/metadc674270

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Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • October 1, 1998

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • July 21, 2016, 6:12 p.m.

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Kramer, S. L. & Wang, J. M. Beam induced rf cavity transient voltage, report, October 1, 1998; Upton, New York. (digital.library.unt.edu/ark:/67531/metadc674270/: accessed August 15, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.