Threshold irradiation dose for amorphization of silicon carbide

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The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ... continued below

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13 p.

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Snead, L.L. & Zinkle, S.J. March 1, 1997.

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The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface or strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56eV. This model successfully explains the difference in the temperature dependent amorphization behavior of SiC irradiated with 0.56 MeV Si{sup +} at 1 x 10{sup -3} dpa/s and with fission neutrons irradiated at 1 x 10{sup -6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340{+-}10K.

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13 p.

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INIS; OSTI as DE97003498

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  • Spring meeting of the Materials Research Society, San Francisco, CA (United States), 31 Mar - 4 Apr 1997

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  • Other: DE97003498
  • Report No.: CONF-970302--1
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 448085
  • Archival Resource Key: ark:/67531/metadc674252

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • March 1, 1997

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  • July 25, 2015, 2:21 a.m.

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  • Jan. 25, 2016, 12:30 p.m.

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Snead, L.L. & Zinkle, S.J. Threshold irradiation dose for amorphization of silicon carbide, article, March 1, 1997; Tennessee. (digital.library.unt.edu/ark:/67531/metadc674252/: accessed September 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.