Extending the cutoff wavelength of lattice-matched GaInAsSb/GaSb thermophotovoltaics devices

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This paper reports the growth, materials characterization, and device performance of lattice-matched GaInAsSb/GaSb thermophotovoltaic (TPV) devices with cutoff wavelength as long as 2.5 {micro}m. GaInAsSb epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) using all organometallic precursors including triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony with diethyltellurium and dimethylzinc as the n- and p-type dopants, respectively. The growth temperature was 525 C. Although these alloys are metastable, a mirror-like surface morphology and room temperature photoluminescence (PL) are obtained for alloys with PL peak emission at room temperature as long as 2.5 {micro}m. In general, however, a ... continued below

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18 p.

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Wang, C.A.; Choi, H.K.; Oakley, D.C. & Charache, G.W. October 1, 1998.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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This paper reports the growth, materials characterization, and device performance of lattice-matched GaInAsSb/GaSb thermophotovoltaic (TPV) devices with cutoff wavelength as long as 2.5 {micro}m. GaInAsSb epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) using all organometallic precursors including triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony with diethyltellurium and dimethylzinc as the n- and p-type dopants, respectively. The growth temperature was 525 C. Although these alloys are metastable, a mirror-like surface morphology and room temperature photoluminescence (PL) are obtained for alloys with PL peak emission at room temperature as long as 2.5 {micro}m. In general, however, a trend of decreasing material quality is observed as the wavelength increases. Both the surface roughness and PL full width at half-maximum increase with wavelength. In spite of the dependence of material quality on PL peak emission wavelength, the internal quantum efficiency of TPV devices with cutoff wavelengths of 2.3 to 2.5 {micro}m is as high as 86%.

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18 p.

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OSTI as DE99001619

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  • 4. National Renewable Energy Laboratory (NREL) conference on thermophotovoltaic generation of electricity, Denver, CO (United States), 11-14 Oct 1998

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  • Other: DE99001619
  • Report No.: KAPL-P--000113
  • Report No.: K--98152;CONF-981055--
  • Grant Number: AC12-76SN00052
  • Office of Scientific & Technical Information Report Number: 307866
  • Archival Resource Key: ark:/67531/metadc674166

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  • October 1, 1998

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  • July 25, 2015, 2:20 a.m.

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  • May 16, 2016, 3:52 p.m.

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Wang, C.A.; Choi, H.K.; Oakley, D.C. & Charache, G.W. Extending the cutoff wavelength of lattice-matched GaInAsSb/GaSb thermophotovoltaics devices, article, October 1, 1998; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc674166/: accessed July 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.