{l_brace}311{r_brace} Defects in ion-implanted silicon: The cause of transient diffusion, and a mechanism for dislocation formation (All Formats)
This item is available in multiple formats. Choose one below.
| Number of items: | 8 |
|---|---|
| Filetype: | jpg (image) |
| Number of items: | 1 |
|---|---|
| Filetype: | pdf (file) |