{l_brace}311{r_brace} Defects in ion-implanted silicon: The cause of transient diffusion, and a mechanism for dislocation formation

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Ion implantation is used at several critical stages of Si integrated circuit manufacturing. The authors show how {l_brace}311{r_brace} defects arising after implantation are responsible for both enhanced dopant diffusion during annealing, and stable dislocations post-anneal. They observe {l_brace}311{r_brace} defects in the earliest stages of an anneal. They subsequently undergo rapid Ostwald ripening and evaporation. At low implant doses evaporation dominates, and they can quantitatively relate the interstitials emitted from these defects to the transient enhancement in diffusivity of dopants such as B and P. At higher doses Ostwald ripening is significant, and they observe the defects to undergo a series ... continued below

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8 p.

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Eaglesham, D. J.; Stolk, P. A.; Cheng, J. Y.; Gossmann, H. J.; Poate, J. M. & Haynes, T. E. April 1995.

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Ion implantation is used at several critical stages of Si integrated circuit manufacturing. The authors show how {l_brace}311{r_brace} defects arising after implantation are responsible for both enhanced dopant diffusion during annealing, and stable dislocations post-anneal. They observe {l_brace}311{r_brace} defects in the earliest stages of an anneal. They subsequently undergo rapid Ostwald ripening and evaporation. At low implant doses evaporation dominates, and they can quantitatively relate the interstitials emitted from these defects to the transient enhancement in diffusivity of dopants such as B and P. At higher doses Ostwald ripening is significant, and they observe the defects to undergo a series of unfaulting reactions to form both Frank loops and perfect dislocations. They demonstrate the ability to control both diffusion and dislocations by the addition of small amounts of carbon impurities.

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8 p.

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INIS; OSTI as DE96005430

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  • 9. international conference on microscopy of semiconducting materials, Oxford (United Kingdom), 20-23 Mar 1995

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  • Other: DE96005430
  • Report No.: CONF-9503125--4
  • Grant Number: AC05-84OR21400
  • Office of Scientific & Technical Information Report Number: 201785
  • Archival Resource Key: ark:/67531/metadc673385

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  • April 1995

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  • June 29, 2015, 9:42 p.m.

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  • May 2, 2016, 3:57 p.m.

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Eaglesham, D. J.; Stolk, P. A.; Cheng, J. Y.; Gossmann, H. J.; Poate, J. M. & Haynes, T. E. {l_brace}311{r_brace} Defects in ion-implanted silicon: The cause of transient diffusion, and a mechanism for dislocation formation, article, April 1995; Tennessee. (digital.library.unt.edu/ark:/67531/metadc673385/: accessed October 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.