Cavity formation and impurity gettering in He-implanted Si

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Description

Cavity microstructures formed in Si after ion implantation of He and annealing at 700 C or above are examined with cross-section transmission electron microscopy. A threshold concentration of 1.6 at.% He is identified to form cavities that survive such anneals. The cavities coarsen with a constant volume of 15 nm{sup 3}/nm{sup 2} (per wafer surface area), corresponding to {approximately}0.75 lattice sites per implanted He atom. The internal area of the cavities is 3--7 times that of the wafer surface area for fluences of 1 {times} 10{sup 17} He/cm{sup 2}. Transition metal atoms (Cu, Ni, Co, Fe, Au) are shown to ... continued below

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36 p.

Creation Information

Follstaedt, D.M.; Myers, S.M.; Petersen, G.A. & Medernach, J.W. December 31, 1994.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Cavity microstructures formed in Si after ion implantation of He and annealing at 700 C or above are examined with cross-section transmission electron microscopy. A threshold concentration of 1.6 at.% He is identified to form cavities that survive such anneals. The cavities coarsen with a constant volume of 15 nm{sup 3}/nm{sup 2} (per wafer surface area), corresponding to {approximately}0.75 lattice sites per implanted He atom. The internal area of the cavities is 3--7 times that of the wafer surface area for fluences of 1 {times} 10{sup 17} He/cm{sup 2}. Transition metal atoms (Cu, Ni, Co, Fe, Au) are shown to be strongly trapped (1.5--2.2 eV) on the cavity walls by chemisorption. Whereas Cu, Au and Ni are bound more strongly to the cavity sites than to their respective precipitated phases, Co and Fe are more strongly bound to their silicides; nonetheless, appreciable trapping of Co and Fe does occur in equilibrium with the silicides. Cavity trapping appears to be an effective gettering mechanism at low impurity levels, as needed to meet future microelectronics device requirements.

Physical Description

36 p.

Notes

INIS; OSTI as DE95007744

Source

  • Annual meeting and exhibition of the Minerals, Metals and Materials Society (TMS), Las Vegas, NV (United States), 12-16 Feb 1995

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  • Other: DE95007744
  • Report No.: SAND--94-2049C
  • Report No.: CONF-950201--3
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/28380 | External Link
  • Office of Scientific & Technical Information Report Number: 28380
  • Archival Resource Key: ark:/67531/metadc673366

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • December 31, 1994

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • April 14, 2016, 3:20 p.m.

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Follstaedt, D.M.; Myers, S.M.; Petersen, G.A. & Medernach, J.W. Cavity formation and impurity gettering in He-implanted Si, report, December 31, 1994; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc673366/: accessed October 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.