Effect of Inert Gas Additive Species on Cl(2) High Density Plasma Etching of Compound Semiconductors: Part II. InP, InSb, InGaP and InGaAs

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The effects of the additive noble gases He, Ar and Xe on chlorine-based Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs were studied as a function of source power, chuck power and discharge composition. The etch rates of all materials with C12/He and C12/Xe are greater than with C12/Ar. Etch rates in excess of 4.8 pndmin for InP and InSb with C12/He or C12/Xe, 0.9 pndmin for InGaP with C12/Xe, and 3.8 prdmin for InGaAs with Clz/Xe were obtained at 750 W ICP power, 250 W rf power, - 1570 C12 and 5 mTorr. All three plasma chemistries ... continued below

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Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Jung, K.B.; Pearton, S.J. et al. December 17, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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The effects of the additive noble gases He, Ar and Xe on chlorine-based Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs were studied as a function of source power, chuck power and discharge composition. The etch rates of all materials with C12/He and C12/Xe are greater than with C12/Ar. Etch rates in excess of 4.8 pndmin for InP and InSb with C12/He or C12/Xe, 0.9 pndmin for InGaP with C12/Xe, and 3.8 prdmin for InGaAs with Clz/Xe were obtained at 750 W ICP power, 250 W rf power, - 1570 C12 and 5 mTorr. All three plasma chemistries produced smooth morphologies for the etched InGaP surfaces, while the etched surface of InP showed rough morphology under all conditions.

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  • Journal Name: Applied Surface Science

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  • Other: DE00002446
  • Report No.: SAND98-2820J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 2446
  • Archival Resource Key: ark:/67531/metadc673295

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  • December 17, 1998

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  • June 29, 2015, 9:42 p.m.

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  • Dec. 7, 2016, 10:57 a.m.

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Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Jung, K.B.; Pearton, S.J. et al. Effect of Inert Gas Additive Species on Cl(2) High Density Plasma Etching of Compound Semiconductors: Part II. InP, InSb, InGaP and InGaAs, article, December 17, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc673295/: accessed September 22, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.