Nanocrystal formation via yttrium ion implantation into sapphire

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Description

Ion implantation has been used to form nanocrystals in the near surface of single crystal {alpha}-Al{sub 2}O{sub 3}. The ion fluence was 5 x 10{sup 16} Y{sup +}/cm{sup 2}, and the implant energies investigated were 100, 150, and 170 keV. The morphology of the implanted region was investigated using transmission electron microscopy, x-ray energy dispersive spectroscopy, Rutherford backscattering spectroscopy and ion channeling. The implantation causes the formation of an amorphous surface layer which contains spherical nanosized crystals with a diameter of {approximately}13 nm. The nanocrystals are randomly oriented and exhibit a face-centered cubic structure with a lattice parameter of {approximately}4.1 ... continued below

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7 p.

Creation Information

Hunt, E.M.; Hampikian, J.M. & Poker, D.B. December 31, 1995.

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  • Hunt, E.M.
  • Hampikian, J.M. Georgia Institute of Technology, Atlanta, GA (United States). School of Materials Science and Engineering
  • Poker, D.B. Oak Ridge National Lab., TN (United States). Solid State Div.

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Description

Ion implantation has been used to form nanocrystals in the near surface of single crystal {alpha}-Al{sub 2}O{sub 3}. The ion fluence was 5 x 10{sup 16} Y{sup +}/cm{sup 2}, and the implant energies investigated were 100, 150, and 170 keV. The morphology of the implanted region was investigated using transmission electron microscopy, x-ray energy dispersive spectroscopy, Rutherford backscattering spectroscopy and ion channeling. The implantation causes the formation of an amorphous surface layer which contains spherical nanosized crystals with a diameter of {approximately}13 nm. The nanocrystals are randomly oriented and exhibit a face-centered cubic structure with a lattice parameter of {approximately}4.1 A {+-} .02 A. Preliminary chemical analysis shows that these nanocrystals are rich in aluminum and yttrium and poor in oxygen relative to the amorphous matrix.

Physical Description

7 p.

Notes

OSTI as DE96008697

Source

  • Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995

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  • Other: DE96008697
  • Report No.: CONF-951155--97
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 220444
  • Archival Resource Key: ark:/67531/metadc673289

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • December 31, 1995

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • June 27, 2016, 3:23 p.m.

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Hunt, E.M.; Hampikian, J.M. & Poker, D.B. Nanocrystal formation via yttrium ion implantation into sapphire, article, December 31, 1995; Tennessee. (digital.library.unt.edu/ark:/67531/metadc673289/: accessed January 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.