AC coupled silicon detectors, being used for the DO upgrade, may have substantial voltage across the coupling capacitor. Failed capacitors can present {approximately}50 V to the input of the SVX, Silicon Vertex, device. We measured the effects that failed detector coupling capacitors have on the SVXD (rad soft 3{mu}m), SVXH (rad hard 1.2{mu}m), and SVXIIb (rad soft 1.2{mu}m) amplifier / readout devices. The test results show that neighboring channels saturate when an excessive voltage is applied directly to a SVX channel. We believe that the effects are due to current diffusion within the SVX substrate rather than surface currents on ...
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Fermi National Accelerator Lab., Batavia, IL (United States)
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Batavia, Illinois
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AC coupled silicon detectors, being used for the DO upgrade, may have substantial voltage across the coupling capacitor. Failed capacitors can present {approximately}50 V to the input of the SVX, Silicon Vertex, device. We measured the effects that failed detector coupling capacitors have on the SVXD (rad soft 3{mu}m), SVXH (rad hard 1.2{mu}m), and SVXIIb (rad soft 1.2{mu}m) amplifier / readout devices. The test results show that neighboring channels saturate when an excessive voltage is applied directly to a SVX channel. We believe that the effects are due to current diffusion within the SVX substrate rather than surface currents on the detectors. This paper discusses the magnitude of the saturation and a possible solution to the problem.
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Bagby, L.; Johnson, M.; Lipton, R. & Gu, W.SVX/silicon detector studies,
article,
November 1, 1995;
Batavia, Illinois.
(digital.library.unt.edu/ark:/67531/metadc673059/:
accessed September 25, 2018),
University of North Texas Libraries, Digital Library, digital.library.unt.edu;
crediting UNT Libraries Government Documents Department.
