AC coupled silicon detectors, being used for the DO upgrade, may have substantial voltage across the coupling capacitor. Failed capacitors can present {approximately}50 V to the input of the SVX, Silicon Vertex, device. We measured the effects that failed detector coupling capacitors have on the SVXD (rad soft 3{mu}m), SVXH (rad hard 1.2{mu}m), and SVXIIb (rad soft 1.2{mu}m) amplifier / readout devices. The test results show that neighboring channels saturate when an excessive voltage is applied directly to a SVX channel. We believe that the effects are due to current diffusion within the SVX substrate rather than surface currents on ...
continued below
Publisher Info:
Fermi National Accelerator Lab., Batavia, IL (United States)
Place of Publication:
Batavia, Illinois
Provided By
UNT Libraries Government Documents Department
Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.
Descriptive information to help identify this article.
Follow the links below to find similar items on the Digital Library.
Description
AC coupled silicon detectors, being used for the DO upgrade, may have substantial voltage across the coupling capacitor. Failed capacitors can present {approximately}50 V to the input of the SVX, Silicon Vertex, device. We measured the effects that failed detector coupling capacitors have on the SVXD (rad soft 3{mu}m), SVXH (rad hard 1.2{mu}m), and SVXIIb (rad soft 1.2{mu}m) amplifier / readout devices. The test results show that neighboring channels saturate when an excessive voltage is applied directly to a SVX channel. We believe that the effects are due to current diffusion within the SVX substrate rather than surface currents on the detectors. This paper discusses the magnitude of the saturation and a possible solution to the problem.
This article is part of the following collection of related materials.
Office of Scientific & Technical Information Technical Reports
Reports, articles and other documents harvested from the Office of Scientific and Technical Information.
Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.
Bagby, L.; Johnson, M.; Lipton, R. & Gu, W.SVX/silicon detector studies,
article,
November 1, 1995;
Batavia, Illinois.
(digital.library.unt.edu/ark:/67531/metadc673059/:
accessed April 25, 2018),
University of North Texas Libraries, Digital Library, digital.library.unt.edu;
crediting UNT Libraries Government Documents Department.