Growth of oriented rare-earth-transition-metal thin filmsFullerton, Eric E.perSowers, C. H.perBader, S. D.perArgonne National Lab., IL (United States)Wu, X. Z.perNorthern Illinois Univ., DeKalb, IL (United States)United States. Department of Energy.orgUSDOE, Washington, DC (United States)Argonne National LaboratoryIllinoisArgonne National Lab., IL (United States)1996-04-01engRare-earth-transition-metal thin films are successfully grown by magnetron sputtering onto single-crystal MgO substrates with epitaxial W buffer layers. The use of epitaxial W buffer layers allows oriented single-phase films to be grown. Sm-Co films grown onto W(100), have strong in-plane anisotropy and coercivities exceeding 5 T at 5 K whereas Fe-Sm films have strong perpendicular anisotropy and are magnetically soft.7 p.Magnetic PropertiesAnisotropyTungstenCrystal Structure36 Materials ScienceThin FilmsNeodymium AlloysLattice ParametersLayersMagnesium OxidesCobalt AlloysSamarium AlloysCrystal GrowthIron AlloysSubstratesOSTIUNTGDtext_articletextDE96009042ANL/MSD/CP--88691CONF-960425--4W-31109-ENG-38226426OSTI as DE96009042
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