Electrical test structures replicated in silicon-on-insulator material

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Description

Measurements of the linewidths of submicrometer features made by different metrology techniques have frequently been characterized by differences of up to 90 nm. The purpose of the work reported here is to address the special difficulties that this phenomenon presents to the certification of reference materials for the calibration of linewidth-measurement instruments. Accordingly, a new test structure has been designed, fabricated, and undergone preliminary tests. Its distinguishing characteristics are assured cross-sectional profile geometries with known side-wall slopes, surface planarity, and compositional uniformity when it is formed in mono-crystalline material at selected orientations to the crystal lattice. To allow the extraction ... continued below

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25 p.

Creation Information

Cresswell, M.W.; Ghoshtagore, R.N.; Allen, R.A.; Linholm, L.W.; Villarrubia, J.S. & Sniegowski, J.J. February 27, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Measurements of the linewidths of submicrometer features made by different metrology techniques have frequently been characterized by differences of up to 90 nm. The purpose of the work reported here is to address the special difficulties that this phenomenon presents to the certification of reference materials for the calibration of linewidth-measurement instruments. Accordingly, a new test structure has been designed, fabricated, and undergone preliminary tests. Its distinguishing characteristics are assured cross-sectional profile geometries with known side-wall slopes, surface planarity, and compositional uniformity when it is formed in mono-crystalline material at selected orientations to the crystal lattice. To allow the extraction of electrical linewidth, the structure is replicated in a silicon film of uniform conductivity which is separated from the silicon substrate by a buried oxide layer. The utilization of a Silicon-On-Insulator (SKI) substrate further allows the selective removal of substrate material from local regions below the reference features, thus facilitating measurements by optical and electron-beam transmission microscopy. The combination of planar feature surfaces having known side-wall slopes is anticipated to eliminate factors which are believed to be responsible for methods divergence in linewidth measurements, a capability which is a prerequisite for reliable certification of the linewidths of features on reference materials.

Physical Description

25 p.

Notes

OSTI as TI96006975

Source

  • 1996 International Society for Optical Engineering (SPIE) international symposium on microlithography, Santa Clara, CA (United States), 11-15 Mar 1996

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  • Other: TI96006975
  • Report No.: SAND--96-0713C
  • Report No.: CONF-9603140--1
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/221938 | External Link
  • Office of Scientific & Technical Information Report Number: 221938
  • Archival Resource Key: ark:/67531/metadc672954

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Creation Date

  • February 27, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • April 14, 2016, 3:44 p.m.

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Cresswell, M.W.; Ghoshtagore, R.N.; Allen, R.A.; Linholm, L.W.; Villarrubia, J.S. & Sniegowski, J.J. Electrical test structures replicated in silicon-on-insulator material, report, February 27, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc672954/: accessed October 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.