Reciprocal space analysis of the initial stages of strain relaxation in SiGe epilayers

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Metastable SiGe films were grown by MBE on Si (001) substrates and annealed to promote varying degrees of partial relaxation. X-ray diffraction reciprocal-space analysis was then used to monitor the structural evolution of the displacement fields of the dislocation array with increasing misfit density. The diffuse-x-ray-scattering patterns of the dislocated heterolayers were compared with lineal- misfit densities determined by defect etching, leading to the develop a geometric model which provides a framework for understanding the early-stage evolution of the displacement fields of the dislocation array, and which also explicitly links diffuse x-ray intensity to misfit density. At low misfit density, ... continued below

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6 p.

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Lee, S.R. & Floro, J.A. January 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Metastable SiGe films were grown by MBE on Si (001) substrates and annealed to promote varying degrees of partial relaxation. X-ray diffraction reciprocal-space analysis was then used to monitor the structural evolution of the displacement fields of the dislocation array with increasing misfit density. The diffuse-x-ray-scattering patterns of the dislocated heterolayers were compared with lineal- misfit densities determined by defect etching, leading to the develop a geometric model which provides a framework for understanding the early-stage evolution of the displacement fields of the dislocation array, and which also explicitly links diffuse x-ray intensity to misfit density. At low misfit density, the diffuse intensity arises from two-dimensional displacement fields associated with single-nonoverlapping dislocations. As misfit density increases, the displacement fields of individual dislocations increasingly overlap producing three-dimensional displacements. The evolving diffuse intensity reflects the transition from 2-D to 3-D displacement fields. Finally, it is demonstrated that the diffuse x-ray intensity of the strained epilayer can be used to accurately measure lineal misfit- dislocation densities from 400 to 20,000 lines/cm.

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6 p.

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OSTI as DE96004646

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  • Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995

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  • Other: DE96004646
  • Report No.: SAND--96-0081C
  • Report No.: CONF-951155--26
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 187238
  • Archival Resource Key: ark:/67531/metadc672747

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  • January 1, 1996

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  • June 29, 2015, 9:42 p.m.

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  • April 14, 2016, 6:40 p.m.

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Lee, S.R. & Floro, J.A. Reciprocal space analysis of the initial stages of strain relaxation in SiGe epilayers, article, January 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc672747/: accessed October 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.