Simplified models of growth, defect formation, and thermal conductivity in diamond chemical vapor deposition

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Description

A simplified surface reaction mechanism is presented for the CVD of diamond thin films. The mechanism also accounts for formation of point defects in the diamond lattice, an alternate, undesirable reaction pathway. Both methyl radicals and atomic C are considered as growth precursors. While not rigorous in all details, the mechanism is useful in describing the CVD diamond process over a wide range of reaction conditions. It should find utility in reactor modeling studies, for example in optimizing diamond growth rate while minimizing defect formation. This report also presents a simple model relating the diamond point-defect density to the thermal ... continued below

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17 p.

Creation Information

Coltrin, M.E. & Dandy, D.S. April 1, 1996.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

A simplified surface reaction mechanism is presented for the CVD of diamond thin films. The mechanism also accounts for formation of point defects in the diamond lattice, an alternate, undesirable reaction pathway. Both methyl radicals and atomic C are considered as growth precursors. While not rigorous in all details, the mechanism is useful in describing the CVD diamond process over a wide range of reaction conditions. It should find utility in reactor modeling studies, for example in optimizing diamond growth rate while minimizing defect formation. This report also presents a simple model relating the diamond point-defect density to the thermal conductivity of the material.

Physical Description

17 p.

Notes

OSTI as DE96010374

Source

  • Other Information: PBD: Apr 1996

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  • Other: DE96010374
  • Report No.: SAND--96-0883
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/233352 | External Link
  • Office of Scientific & Technical Information Report Number: 233352
  • Archival Resource Key: ark:/67531/metadc672606

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Office of Scientific & Technical Information Technical Reports

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Creation Date

  • April 1, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • April 14, 2016, 12:42 p.m.

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Coltrin, M.E. & Dandy, D.S. Simplified models of growth, defect formation, and thermal conductivity in diamond chemical vapor deposition, report, April 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc672606/: accessed December 10, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.