Model Etch Profiles for Ion Energy Distribution Functions in an Inductively Coupled Plasma Reactor

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Rectangular trench profiles are modeled with analytic etch rates determined from measured ion distribution functions. The pattern transfer step for this plasma etch is for trilayer lithography. Argon and chlorine angular ion energy distribution functions measured by a spherical collector ring analyzer are fit to a sum of drifting Maxwellian velocity distribution functions with anisotropic temperatures. The fit of the model ion distribution functions by a simulated annealing optimization procedure converges adequately for only two drifting Maxwellians. The etch rates are proportional to analytic expressions for the ion energy flux. Numerical computation of the etch profiles by integration of the ... continued below

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Abraham-Shrauner, B.; Chen, W. & Woodworth, J.R. December 14, 1998.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 23 times , with 4 in the last month . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Rectangular trench profiles are modeled with analytic etch rates determined from measured ion distribution functions. The pattern transfer step for this plasma etch is for trilayer lithography. Argon and chlorine angular ion energy distribution functions measured by a spherical collector ring analyzer are fit to a sum of drifting Maxwellian velocity distribution functions with anisotropic temperatures. The fit of the model ion distribution functions by a simulated annealing optimization procedure converges adequately for only two drifting Maxwellians. The etch rates are proportional to analytic expressions for the ion energy flux. Numerical computation of the etch profiles by integration of the characteristic equations for profile points and connection of the profiles points is efficient.

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  • Journal Name: Journal of Applied Physics

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  • Other: DE00002371
  • Report No.: SAND98-2786J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 2371
  • Archival Resource Key: ark:/67531/metadc672533

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  • December 14, 1998

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  • June 29, 2015, 9:42 p.m.

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  • Dec. 7, 2016, 5:42 p.m.

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Abraham-Shrauner, B.; Chen, W. & Woodworth, J.R. Model Etch Profiles for Ion Energy Distribution Functions in an Inductively Coupled Plasma Reactor, article, December 14, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc672533/: accessed October 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.