Solid phase epitaxial regrowth of (100)GaAs

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This thesis showed that low temperature (250 C) SPE of stoichiometrically balanced ion implanted GaAs layers can yield good epitaxial recovery for doses near the amorphization threshold. For 250 C anneals, most of the regrowth occurred in the first 10 min. HRTEM revealed much lower stacking fault density in the co-implanted sample than in the As-only and Ga-only samples with comparable doses. After low temp annealing, the nonstoichiometric samples had a large number of residual defects. For higher dose implants, very high temperatures (700 C) were needed to remove residual defects for all samples. The stoichiometrically balanced layer did not ... continued below

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112 p.

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Almonte, M. I. February 1, 1996.

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  • Almonte, M. I. California Univ., Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering

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Description

This thesis showed that low temperature (250 C) SPE of stoichiometrically balanced ion implanted GaAs layers can yield good epitaxial recovery for doses near the amorphization threshold. For 250 C anneals, most of the regrowth occurred in the first 10 min. HRTEM revealed much lower stacking fault density in the co-implanted sample than in the As-only and Ga-only samples with comparable doses. After low temp annealing, the nonstoichiometric samples had a large number of residual defects. For higher dose implants, very high temperatures (700 C) were needed to remove residual defects for all samples. The stoichiometrically balanced layer did not regrow better than the Ga-only and As-only samples. The co-implanted sample exhibited a thinner amorphous layer and a room temperature (RT) annealing effect. The amorphous layer regrew about 5 nm, suggesting that stoichiometrically balanced amorphous layers can regrow even at RT. Mechanisms for solid phase crystallization in (100)GasAs is discussed: nucleation and growth of randomly oriented crystallites and SPE. These two mechanisms compete in compound semiconductors at much lower temperatures than in Si. For the low dose As-only and Ga-only samples with low-temp anneals, both mechanisms are active. For this amorphization threshold dose, crystallites remain in the amorphous layer for all as-implants. 250 C annealing showed recrystallization from the surface and bulk for these samples; for the co-implant, the mechanism is not evident.

Physical Description

112 p.

Notes

OSTI as DE96008481

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  • Other Information: TH: Thesis (M.S.)

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  • Other: DE96008481
  • Report No.: LBL--38437
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 210931
  • Archival Resource Key: ark:/67531/metadc672457

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • February 1, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • June 27, 2016, 1:18 p.m.

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Almonte, M. I. Solid phase epitaxial regrowth of (100)GaAs, thesis or dissertation, February 1, 1996; California. (digital.library.unt.edu/ark:/67531/metadc672457/: accessed December 15, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.