Formation and properties of porous GaAs

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Porous structures on n-type GaAs (100) can be grown electrochemically in chloride-containing solutions. Crystallographic etching of the sample is a precursor stage of the attack. Polarization curves reveal the existanece of a critical onset potential for por formation (PFP). PFP is strongly dependent on the doping level of the sample and presence of surface defects. Good agreement between PFP and breakdown voltage of the space charge layer is found. Surface analysis by EDX, AES, and XPS show that the porous structure consists mainly of GaAs and that anion uptake in the structure can only observed after attackhas been initiated. Photoluminescence ... continued below

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9 p.

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Schmuki, P.; Lockwood, D.J.; Fraser, J.W.; Graham, M.J. & Isaacs, H.S. June 1, 1996.

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Porous structures on n-type GaAs (100) can be grown electrochemically in chloride-containing solutions. Crystallographic etching of the sample is a precursor stage of the attack. Polarization curves reveal the existanece of a critical onset potential for por formation (PFP). PFP is strongly dependent on the doping level of the sample and presence of surface defects. Good agreement between PFP and breakdown voltage of the space charge layer is found. Surface analysis by EDX, AES, and XPS show that the porous structure consists mainly of GaAs and that anion uptake in the structure can only observed after attackhas been initiated. Photoluminescence measurements reveal (under certain conditions) visible light emission from the porous structure.

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9 p.

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OSTI as DE96011809

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  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996

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  • Other: DE96011809
  • Report No.: BNL--63136
  • Report No.: CONF-960401--45
  • Grant Number: AC02-76CH00016
  • Office of Scientific & Technical Information Report Number: 245531
  • Archival Resource Key: ark:/67531/metadc672335

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • June 1, 1996

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  • June 29, 2015, 9:42 p.m.

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  • Nov. 30, 2015, 8:47 p.m.

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Schmuki, P.; Lockwood, D.J.; Fraser, J.W.; Graham, M.J. & Isaacs, H.S. Formation and properties of porous GaAs, article, June 1, 1996; Upton, New York. (digital.library.unt.edu/ark:/67531/metadc672335/: accessed December 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.