High gain GaAs photoconductive semiconductor switches for ground penetrating radar

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The ability of high gain GaAs Photoconductive Semiconductor switches (PCSS) to deliver high peak power, fast risetime pulses when triggered with small laser diode arrays makes them suitable for their use in radars that rely on fast impulses. This type of direct time domain radar is uniquely suited for observation of large structures under ground because it can operate at low frequencies and at high average power. This paper will summarize the state-of-the-art in high gain GaAs switches and discuss their use in a radar transmitter. We will also present a summary of an analysis of the effectiveness of different ... continued below

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4 p.

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Loubriel, G.M.; Aurand, J.F.; Buttram, M.T.; Zutavern, F.J.; Helgeson, W.D.; O`Malley, M.W. et al. July 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The ability of high gain GaAs Photoconductive Semiconductor switches (PCSS) to deliver high peak power, fast risetime pulses when triggered with small laser diode arrays makes them suitable for their use in radars that rely on fast impulses. This type of direct time domain radar is uniquely suited for observation of large structures under ground because it can operate at low frequencies and at high average power. This paper will summarize the state-of-the-art in high gain GaAs switches and discuss their use in a radar transmitter. We will also present a summary of an analysis of the effectiveness of different pulser geometries that result in transmitted pulses with varying frequency content. To this end we developed a simple model that includes transmit and receive antenna response, attenuation and dispersion of the electromagnetic impulses by the soil, and target cross sections.

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4 p.

Notes

OSTI as DE96013031

Source

  • 22. International power modulator symposium, Boca Raton, FL (United States), 24-27 Jun 1996

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  • Other: DE96013031
  • Report No.: SAND--96-1791C
  • Report No.: CONF-960685--3
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 266843
  • Archival Resource Key: ark:/67531/metadc672170

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  • July 1, 1996

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  • June 29, 2015, 9:42 p.m.

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  • April 13, 2016, 2:09 p.m.

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Loubriel, G.M.; Aurand, J.F.; Buttram, M.T.; Zutavern, F.J.; Helgeson, W.D.; O`Malley, M.W. et al. High gain GaAs photoconductive semiconductor switches for ground penetrating radar, article, July 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc672170/: accessed January 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.