Advanced materials development for multi-junction monolithic photovoltaic devices

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Description

We report results in three areas of research relevant to the fabrication of monolithic multi-junction photovoltaic devices. (1) The use of compliant intervening layers grown between highly mismatched materials, GaAs and GaP (same lattice constant as Si), is shown to increase the structural quality of the GaAs overgrowth. (2) The use of digital alloys applied to the MBE growth of GaAs{sub x}Sb{sub l-x} (a candidate material for a two junction solar cell) provides increased control of the alloy composition without degrading the optical properties. (3) A nitrogen plasma discharge is shown to be an excellent p-type doping source for CdTe ... continued below

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15 p.

Creation Information

Dawson, L.R. & Reno, J.L. July 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

We report results in three areas of research relevant to the fabrication of monolithic multi-junction photovoltaic devices. (1) The use of compliant intervening layers grown between highly mismatched materials, GaAs and GaP (same lattice constant as Si), is shown to increase the structural quality of the GaAs overgrowth. (2) The use of digital alloys applied to the MBE growth of GaAs{sub x}Sb{sub l-x} (a candidate material for a two junction solar cell) provides increased control of the alloy composition without degrading the optical properties. (3) A nitrogen plasma discharge is shown to be an excellent p-type doping source for CdTe and ZnTe, both of which are candidate materials for a two junction solar cell.

Physical Description

15 p.

Notes

OSTI as DE96013133

Source

  • Other Information: PBD: Jul 1996

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  • Other: DE96013133
  • Report No.: SAND--96-1628
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/273725 | External Link
  • Office of Scientific & Technical Information Report Number: 273725
  • Archival Resource Key: ark:/67531/metadc672048

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • July 1, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

Description Last Updated

  • April 12, 2016, 9:35 p.m.

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Dawson, L.R. & Reno, J.L. Advanced materials development for multi-junction monolithic photovoltaic devices, report, July 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc672048/: accessed November 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.