A comparison of nodular defect seed geometeries from different deposition techniques

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A focused ion-beam milling instrument commonly utilized in the semiconductor industry for failure analysis and IC repair, is capable of cross-sectioning nodular defects. Utilizing the instrument`s scanning on beam, high-resolution imaging of the seeds that initiate nodular defect growth is possible. In an attempt to understand the origins of these seeds, HfO{sub 2}/SiO{sub 2} and Ta{sub 2}O{sub 5}/SiO{sub 2} coatings were prepared by a variety of coating vendors and different deposition processes including e-beam, magnetron sputtering, and ion beam sputtering. By studying the shape, depth, and composition of the seed, inferences of its origin can be drawn. The boundaries between ... continued below

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11 p.

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Stolz, C.J.; Tench, R.J.; Kozlowski, M.R. & Fornier, A. December 29, 1995.

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Description

A focused ion-beam milling instrument commonly utilized in the semiconductor industry for failure analysis and IC repair, is capable of cross-sectioning nodular defects. Utilizing the instrument`s scanning on beam, high-resolution imaging of the seeds that initiate nodular defect growth is possible. In an attempt to understand the origins of these seeds, HfO{sub 2}/SiO{sub 2} and Ta{sub 2}O{sub 5}/SiO{sub 2} coatings were prepared by a variety of coating vendors and different deposition processes including e-beam, magnetron sputtering, and ion beam sputtering. By studying the shape, depth, and composition of the seed, inferences of its origin can be drawn. The boundaries between the nodule and thin film provide insight into the mechanical stability of the nodule. Significant differences in the seed composition, geometry of nodular growth and mechanical stability of the defects for sputtered versus e-beam coatings are reported. Differences in seed shape were also observed from different coating vendors using e-beam deposition of HfO{sub 2}/SiO{sub 2} coatings.

Physical Description

11 p.

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INIS; OSTI as DE96005397

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  • 27. annual symposium on optical materials for high power lasers, Boulder, CO (United States), 30 Oct - 1 Nov 1995

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  • Other: DE96005397
  • Report No.: UCRL-JC--121628
  • Report No.: CONF-9510106--3
  • Grant Number: W-7405-ENG-48
  • Office of Scientific & Technical Information Report Number: 192499
  • Archival Resource Key: ark:/67531/metadc672017

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • December 29, 1995

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  • June 29, 2015, 9:42 p.m.

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  • Feb. 18, 2016, 12:05 p.m.

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Stolz, C.J.; Tench, R.J.; Kozlowski, M.R. & Fornier, A. A comparison of nodular defect seed geometeries from different deposition techniques, article, December 29, 1995; California. (digital.library.unt.edu/ark:/67531/metadc672017/: accessed November 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.