ECR etching of GaP, GaAs, InP, and InGaAs in Cl{sub 2}/Ar, Cl{sub 2}/N{sub 2}, BCl{sub 3}/Ar, and BCl{sub 3}/N{sub 2}

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Electron cyclotron resonance (ECR) etching GaP, GaAs, InP, and InGaAs are reported as a function of percent chlorine-containing gas for Cl{sub 2}/Ar, Cl{sub 2}/N{sub 2}, BCl{sub 3}/Ar, and BCl{sub 3}N{sub 2} plasma chemistries. GaAs and GaP etch rates were faster than InP and InGaAs, independent of plasma chemistry due to the low volatility of the InCl{sub x} etch products. GaAs and GaP etch rates increased as %Cl{sub 2} was increased for Cl{sub 2}/Ar and Cl{sub 2}/N{sub 2} plasmas. The GaAs and GaP etch rates were much slower in BCl{sub 3}-based plasmas due to lower concentrations of reactive Cl, however enhanced ... continued below

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6 p.

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Shul, R.J.; Baca, A.G.; Rieger, D.J.; Hou, H.; Pearton, S.J. & Ren, F. June 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Electron cyclotron resonance (ECR) etching GaP, GaAs, InP, and InGaAs are reported as a function of percent chlorine-containing gas for Cl{sub 2}/Ar, Cl{sub 2}/N{sub 2}, BCl{sub 3}/Ar, and BCl{sub 3}N{sub 2} plasma chemistries. GaAs and GaP etch rates were faster than InP and InGaAs, independent of plasma chemistry due to the low volatility of the InCl{sub x} etch products. GaAs and GaP etch rates increased as %Cl{sub 2} was increased for Cl{sub 2}/Ar and Cl{sub 2}/N{sub 2} plasmas. The GaAs and GaP etch rates were much slower in BCl{sub 3}-based plasmas due to lower concentrations of reactive Cl, however enhanced etch rates were observed in BCl{sub 3}/N{sub 2} at 75% BCl{sub 3}. Smooth etched surfaces were obtained over a wide range of plasma chemistries.

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6 p.

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OSTI as DE96010521

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  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996

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  • Other: DE96010521
  • Report No.: SAND--96-1143C
  • Report No.: CONF-960401--39
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/244631 | External Link
  • Office of Scientific & Technical Information Report Number: 244631
  • Archival Resource Key: ark:/67531/metadc672004

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • June 1, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • April 14, 2016, 3:36 p.m.

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Shul, R.J.; Baca, A.G.; Rieger, D.J.; Hou, H.; Pearton, S.J. & Ren, F. ECR etching of GaP, GaAs, InP, and InGaAs in Cl{sub 2}/Ar, Cl{sub 2}/N{sub 2}, BCl{sub 3}/Ar, and BCl{sub 3}/N{sub 2}, report, June 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc672004/: accessed December 11, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.