Effect of hydrogen on Ca and Mg acceptors in GaN

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The influence of minority carrier injection on the reactivation of hydrogen passivated Mg in GaN at 175 C has been investigated in p-n junction diodes. The dissociation of the neutral MgH complexes is greatly enhanced in the presence of minority carrier and the reactivation process follows second order kinetics. Conventional annealing under zero-bias conditions does not produce Mg-H dissociation until temperatures {ge} 450 C. These results provide an explanation for the e-beam induced reactivation of Mg acceptors in hydrogenated GaN. Exposure to a hydrogen plasma at 250 C of p-type GaN (Ca) prepared by either Ca{sup +} or Ca{sup +} ... continued below

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19 p.

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Lee, J.W.; Pearton, S.J.; Zolper, J.C. & Stall, R.A. May 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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The influence of minority carrier injection on the reactivation of hydrogen passivated Mg in GaN at 175 C has been investigated in p-n junction diodes. The dissociation of the neutral MgH complexes is greatly enhanced in the presence of minority carrier and the reactivation process follows second order kinetics. Conventional annealing under zero-bias conditions does not produce Mg-H dissociation until temperatures {ge} 450 C. These results provide an explanation for the e-beam induced reactivation of Mg acceptors in hydrogenated GaN. Exposure to a hydrogen plasma at 250 C of p-type GaN (Ca) prepared by either Ca{sup +} or Ca{sup +} plus P{sup +} coimplantation leads to a reduction in sheet carrier density of approximately an order of magnitude (1.6 {times} 10{sup 12} cm{sup {minus}2} to 1.8 {times} 10{sup 11} cm{sup {minus}2}), and an accompanying increase in hole mobility (6 cm{sup 2}/Vs to 18 cm{sup 2}/Vs). The passivation process can be reversed by post-hydrogenation annealing at 400--500 C under a N{sub 2} ambient. This reactivation of the acceptors is characteristic of the formation of neutral (Ca-H) complexes in the GaN. The thermal stability of the passivation is similar to that of Mg-H complexes in material prepared in the same manner (implantation) with similar initial doping levels. Hydrogen passivation of acceptor dopants in GaN appears to be a ubiquitous phenomenon, as it is in other p-type semiconductors.

Physical Description

19 p.

Notes

OSTI as DE96008172

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  • 189. meeting of the Electrochemical Society (ECS), Los Angeles, CA (United States), 5-10 May 1996

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  • Other: DE96008172
  • Report No.: SAND--96-0784C
  • Report No.: CONF-960502--7
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/231543 | External Link
  • Office of Scientific & Technical Information Report Number: 231543
  • Archival Resource Key: ark:/67531/metadc671812

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  • May 1, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • Aug. 23, 2016, 3:31 p.m.

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Lee, J.W.; Pearton, S.J.; Zolper, J.C. & Stall, R.A. Effect of hydrogen on Ca and Mg acceptors in GaN, report, May 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc671812/: accessed October 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.