Sputtering induced changes in defect morphology and dopant diffusion for Si implanted GaAs: Influence of ion energy and implant temperature

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Experimental observations of dopant diffusion and defect formation are reported vs ion energy and implant temperature in Si-implanted GaAs. In higher energy implants (>100 keV), little or no diffusion occurs, while at energies less than 100 keV, the amount of dopant redistribution is inversely proportional to energy. Extended defect density shows the opposite trend, increasing with ion energy. Similarly, Si diffusion during post implant annealing decreases by a factor of 2.5 as the implant temperature increases from -2 to 40 C. In this same temperature range, maximum depth and density of extrinsic dislocation loops increases by factors of 3 and ... continued below

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7 p.

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Robinson, H.G.; Deal, M.D.; Lee, C.C.; Haynes, T.E.; Allen, E.L. & Jones, K.S. December 1, 1994.

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  • Robinson, H.G.
  • Deal, M.D. Stanford Univ., CA (United States). Dept. of Electrical Engineering
  • Lee, C.C. Stanford Univ., CA (United States). Dept. of Materials Science
  • Haynes, T.E. Oak Ridge National Lab., TN (United States)
  • Allen, E.L. San Jose State Univ., CA (United States). Dept. of Materials Engineering
  • Jones, K.S. Florida Univ., Gainesville, FL (United States). Dept. of Materials Science and Engineering

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Experimental observations of dopant diffusion and defect formation are reported vs ion energy and implant temperature in Si-implanted GaAs. In higher energy implants (>100 keV), little or no diffusion occurs, while at energies less than 100 keV, the amount of dopant redistribution is inversely proportional to energy. Extended defect density shows the opposite trend, increasing with ion energy. Similarly, Si diffusion during post implant annealing decreases by a factor of 2.5 as the implant temperature increases from -2 to 40 C. In this same temperature range, maximum depth and density of extrinsic dislocation loops increases by factors of 3 and 4, respectively. Rutherford backscattering channeling indicates that Si- implanted GaAs undergoes an amorphous-to-crystalline transition at Si implant temperatures between -51 and 40 C. A unified explanation of the effects of ion energy and implant temperature on both diffusion and dislocation formation is proposed based on known differences in sputter yields between low and high energy ions and crystalline and amorphous semiconductors. The model assumes that the sputter yield is enhanced at low implant energies and by amorphization, thus increasing the excess vacancy concentration. Estimates of excess vacancy concentration are obtained by simulations of the diffusion profiles and are quantitatively consistent with a realistic sputter yield enhancement. Removal of the vacancy-rich surface by etching prior to annealing completely suppresses the Si diffusion and increases the dislocation density, lending further experimental support to the model.

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7 p.

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OSTI as DE96010642

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  • Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994

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  • Other: DE96010642
  • Report No.: CONF-941144--183
  • Grant Number: AC05-84OR21400
  • Office of Scientific & Technical Information Report Number: 249039
  • Archival Resource Key: ark:/67531/metadc671810

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • December 1, 1994

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • Jan. 21, 2016, 12:27 p.m.

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Robinson, H.G.; Deal, M.D.; Lee, C.C.; Haynes, T.E.; Allen, E.L. & Jones, K.S. Sputtering induced changes in defect morphology and dopant diffusion for Si implanted GaAs: Influence of ion energy and implant temperature, article, December 1, 1994; Tennessee. (digital.library.unt.edu/ark:/67531/metadc671810/: accessed October 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.