Piezoelectric Effects on the Optical Properties of GaN/Al(x)Ga(1-x)N Multiple Quantum Wells

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Piezoelectric effects on the optical properties of GaN/AlGaN multiple quantum wells (MQWS) have been investigated by picosecond time-resolved photoluminescence (PL) measurements. For MQWS with well thickness 30 and 40 the excitonic transition peak positions at 10 K in continuous wave (CW) spectra are red-shifted with respect to the GaN epilayer by 17 meV and 57 meV, respectively. The time-resolved PL spectra of the 30 and 40 well MQWS reveal that the excitonic transition is in fact blue-shifted at early delay times due to quantum confinement of carriers. The spectral peak position shifts toward lower energies as the delay time increases ... continued below

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Botchkarev, A.; Chow, W.W.; Jiang, H.X.; Kim, H.S.; Lin, J.Y. & Morkoc, H. November 10, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Piezoelectric effects on the optical properties of GaN/AlGaN multiple quantum wells (MQWS) have been investigated by picosecond time-resolved photoluminescence (PL) measurements. For MQWS with well thickness 30 and 40 the excitonic transition peak positions at 10 K in continuous wave (CW) spectra are red-shifted with respect to the GaN epilayer by 17 meV and 57 meV, respectively. The time-resolved PL spectra of the 30 and 40 well MQWS reveal that the excitonic transition is in fact blue-shifted at early delay times due to quantum confinement of carriers. The spectral peak position shifts toward lower energies as the delay time increases and becomes red-shifted at longer delay times. We have demonstrated that the results described above is due to the presence of the piezoelectric field in the GaN wells of GaN/AlGaN MQWS subject to elastic strain together with screening of the photoexcited carriers. By comparing experimental and calculation results, we conclude that the piezoelectric field strength in GaN/Al.15G~.85N MQWS has a lower limit value of about 560 kV/cm: The electron and hole wave function distributions have also been obtained. The implication of our findings on the practical applications of GaN based optoelectronic devices is also discussed.

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  • Journal Name: Applied Physics Letters

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  • Other: DE00001939
  • Report No.: SAND98-2511J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 1939
  • Archival Resource Key: ark:/67531/metadc671697

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  • November 10, 1998

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  • June 29, 2015, 9:42 p.m.

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  • Dec. 8, 2016, 8:55 p.m.

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Botchkarev, A.; Chow, W.W.; Jiang, H.X.; Kim, H.S.; Lin, J.Y. & Morkoc, H. Piezoelectric Effects on the Optical Properties of GaN/Al(x)Ga(1-x)N Multiple Quantum Wells, article, November 10, 1998; Albuquerque, New Mexico. (https://digital.library.unt.edu/ark:/67531/metadc671697/: accessed May 27, 2019), University of North Texas Libraries, Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.