Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon

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We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results ... continued below

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4.8 megabytes pages

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Caturla, M.; Johnson, M.D. & Zhu, J. September 18, 1998.

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Description

We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.

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4.8 megabytes pages

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  • Other Information: PBD: 18 Sep 1998

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  • Report No.: UCRL-ID-130457
  • Report No.: YN0100000
  • Report No.: 98-ERD-028
  • Grant Number: W-7405-ENG-48
  • DOI: 10.2172/2853 | External Link
  • Office of Scientific & Technical Information Report Number: 2853
  • Archival Resource Key: ark:/67531/metadc671619

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • September 18, 1998

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  • June 29, 2015, 9:42 p.m.

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  • May 6, 2016, 2:07 p.m.

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Caturla, M.; Johnson, M.D. & Zhu, J. Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon, report, September 18, 1998; California. (digital.library.unt.edu/ark:/67531/metadc671619/: accessed December 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.