Effects of ion beam mixing on the formation of SiGe nanocrystals by ion implantation

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Nanocrystals of SiGe alloy have been formed inside a SiO{sub 2} matrix by the ion implantation technique. It is demonstrated that the sequence of implantation of Si and Ge ions affects the nanocrystal formation significantly. This is explained by the ion beam mixing effect during sequential implantation. The size distributions of the SiGe nanocrystals can also be controlled by annealing conditions.

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5 p.

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Zhu, J. G.; White, C. W.; Budai, J. D.; Withrow, S. P. & Henderson, D. O. June 1996.

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Description

Nanocrystals of SiGe alloy have been formed inside a SiO{sub 2} matrix by the ion implantation technique. It is demonstrated that the sequence of implantation of Si and Ge ions affects the nanocrystal formation significantly. This is explained by the ion beam mixing effect during sequential implantation. The size distributions of the SiGe nanocrystals can also be controlled by annealing conditions.

Physical Description

5 p.

Notes

OSTI as DE96012342

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  • 11. international conference on ion implantation technology, Austin, TX (United States), 17-21 Jun 1996

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  • Other: DE96012342
  • Report No.: CONF-9606110--2
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 258064
  • Archival Resource Key: ark:/67531/metadc671166

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Office of Scientific & Technical Information Technical Reports

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  • June 1996

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  • June 29, 2015, 9:42 p.m.

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  • May 2, 2016, 4:17 p.m.

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Zhu, J. G.; White, C. W.; Budai, J. D.; Withrow, S. P. & Henderson, D. O. Effects of ion beam mixing on the formation of SiGe nanocrystals by ion implantation, article, June 1996; Tennessee. (digital.library.unt.edu/ark:/67531/metadc671166/: accessed October 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.