An alternative approach to filled--via processing

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Description

In order to create sub micron vias between metal layers on silicon IC circuits, the tungsten filled via processes have been in a constant state of development over the past 15 years. Processing is complex, expensive, and difficult to reproduce. The introduction of galvanic cells, via undercutting, and exposed plugs are just some of the plagues that have hit several users of the technology. Discussed in this paper is an alternative approach to the complex tungsten filled via interconnect process. The proposed process yields well at sub micron geometries, is easy to perform, and is inexpensive compared to the tungsten ... continued below

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11 p.

Creation Information

Farino, A.J. February 1, 1996.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

In order to create sub micron vias between metal layers on silicon IC circuits, the tungsten filled via processes have been in a constant state of development over the past 15 years. Processing is complex, expensive, and difficult to reproduce. The introduction of galvanic cells, via undercutting, and exposed plugs are just some of the plagues that have hit several users of the technology. Discussed in this paper is an alternative approach to the complex tungsten filled via interconnect process. The proposed process yields well at sub micron geometries, is easy to perform, and is inexpensive compared to the tungsten filled via process. Contact resistance improves greatly over the standard tungsten process. The test run achieved a mean value of 0.25 ohms per via compared to historic tungsten process that yields 0.4 ohms per via. The distribution was also excellent with sigma recorded at 0.025 ohms per via.

Physical Description

11 p.

Notes

OSTI as DE96007412

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  • 13. international very large scale integrated multilevel interconnection conference, Santa Clara, CA (United States), 18-20 Jun 1996

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  • Other: DE96007412
  • Report No.: SAND--96-0310C
  • Report No.: CONF-9606104--1
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 225046
  • Archival Resource Key: ark:/67531/metadc670973

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • February 1, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • April 12, 2016, 9:38 p.m.

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Farino, A.J. An alternative approach to filled--via processing, article, February 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc670973/: accessed November 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.