Properties variation with composition of single-crystal Pb(Zr{sub x}Ti{sub 1-x})O{sub 3} thin films prepared by MOCVD

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Single-crystal thin films covering the full range of PZT 0{le}x{le}1 have been deposited by metal-organic chemical vapor deposition (MOCVD). The films were grown on epitaxial, RF-sputter-deposited SrRuO{sub 3} thin film electrodes on (001) SrTiO{sub 3} substrates. X-ray diffraction, energy-dispersive electron spectroscopy and optical waveguiding were used to characterize the crystalline structure, composition, refractive index, and film thickness. We found that the PZT films were single-crystalline for all compositions exhibiting cube-on-cube epitaxy with the substrate with very high degrees of crystallinity and orientation. We report the systematic variations in the optical, dielectric, polarization, and transport properties as a function of composition ... continued below

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12 p.

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Foster, C.M.; Bai, G.R.; Li, Z.; Jammy, R.; Wills, L.A. & Hiskes, R. December 1, 1995.

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Single-crystal thin films covering the full range of PZT 0{le}x{le}1 have been deposited by metal-organic chemical vapor deposition (MOCVD). The films were grown on epitaxial, RF-sputter-deposited SrRuO{sub 3} thin film electrodes on (001) SrTiO{sub 3} substrates. X-ray diffraction, energy-dispersive electron spectroscopy and optical waveguiding were used to characterize the crystalline structure, composition, refractive index, and film thickness. We found that the PZT films were single-crystalline for all compositions exhibiting cube-on-cube epitaxy with the substrate with very high degrees of crystallinity and orientation. We report the systematic variations in the optical, dielectric, polarization, and transport properties as a function of composition and the epitaxy-induced modifications in the solid-solution phase diagram of this system. These films exhibited electronic properties which showed clear systematic variations with composition. High values of remnant polarization (30--55 {mu}C/cm{sup 2}) were observed at all ferroelectric compositions. Unlike previous studies, the dielectric constant exhibited a clear dependence on composition with values ranging from 225--650. Coercive fields decreased with increasing Zr concentration to a minimum of 20 kV/cm at the (70/30) composition. In addition, these films exhibited both high resistivity and dielectric-breakdown strength ({approximately}10{sup 13} {Omega}-cm at 100 kV/cm and >300 kV/cm, respectively) without any compensative doping.

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12 p.

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OSTI as DE96007397

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  • Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995

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  • Other: DE96007397
  • Report No.: ANL/MSD/CP--88817
  • Report No.: CONF-951155--78
  • Grant Number: W-31109-ENG-38
  • Office of Scientific & Technical Information Report Number: 206615
  • Archival Resource Key: ark:/67531/metadc670687

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  • December 1, 1995

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  • June 29, 2015, 9:42 p.m.

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  • Dec. 16, 2015, 5:36 p.m.

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Foster, C.M.; Bai, G.R.; Li, Z.; Jammy, R.; Wills, L.A. & Hiskes, R. Properties variation with composition of single-crystal Pb(Zr{sub x}Ti{sub 1-x})O{sub 3} thin films prepared by MOCVD, article, December 1, 1995; Illinois. (digital.library.unt.edu/ark:/67531/metadc670687/: accessed September 25, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.