Technology support for initiation of high-throughput processing of thin-film CdTe PV modules. Phase 1 technical report, March 14, 1995--March 13, 1996

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Progress has been made in the important areas of stability, advanced deposition techniques, efficiency, the back contact, no-contact film diagnostics (photoluminescence) and Cd waste control. The progress in stability has been in both the demonstration of devices maintaining at least 90% of the initial efficiency for over 19,000 hours of continuous light soak and the development of methods which can accurately predict long term behavior based on the first 5,000--10,000 hours of life. Experiments were conducted to determine if device behavior could be accelerated with thermal or voltage stresses. Notable achievements in deposition technology include depositing CdTe on a 3,600 ... continued below

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35 p.

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Sasala, R.; Powell, R. & Dorer, G. June 1, 1996.

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Description

Progress has been made in the important areas of stability, advanced deposition techniques, efficiency, the back contact, no-contact film diagnostics (photoluminescence) and Cd waste control. The progress in stability has been in both the demonstration of devices maintaining at least 90% of the initial efficiency for over 19,000 hours of continuous light soak and the development of methods which can accurately predict long term behavior based on the first 5,000--10,000 hours of life. Experiments were conducted to determine if device behavior could be accelerated with thermal or voltage stresses. Notable achievements in deposition technology include depositing CdTe on a 3,600 cm{sup 2} substrate at 600 torr and designing and fabricating a new deposition feed system with a remote semiconductor source. The efficiency has been increased on small area devices to 13.3% by decreasing the thickness of the CdS and of the glass substrate. Work also focused on using a high resistivity SnO{sub 2} buffer layer between the TCO and thin CdS to help preserve the open-circuit voltage while increasing the current-density. The back contacting process has been simplified by replacing the wet post-deposition etch with a vapor Te deposition step on small area devices. Results show that the devices perform comparably in efficiency but better in stability under light-soaking and open-circuit conditions. Preliminary studies of the correlation between CdS photoluminescence after the chloride treatment and the final device efficiency have shown a positive correlation which may be applicable for in-line quality control. The final area of progress was through the successful demonstration of preventing at least 99.9% of all incoming Cd from leaving in an uncontrolled manner through the land, air or water.

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35 p.

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OSTI as DE96007924

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  • Other Information: PBD: Jun 1996

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  • Other: DE96007924
  • Report No.: NREL/TP--413-21404
  • Grant Number: AC36-83CH10093
  • DOI: 10.2172/266651 | External Link
  • Office of Scientific & Technical Information Report Number: 266651
  • Archival Resource Key: ark:/67531/metadc670510

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  • June 1, 1996

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  • June 29, 2015, 9:42 p.m.

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  • March 31, 2016, 8:53 p.m.

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Sasala, R.; Powell, R. & Dorer, G. Technology support for initiation of high-throughput processing of thin-film CdTe PV modules. Phase 1 technical report, March 14, 1995--March 13, 1996, report, June 1, 1996; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc670510/: accessed September 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.