Chemical and electrical properties of cavities in silicon and germanium

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Description

Cavities were formed in Si and Ge by He ion implantation and annealing, and resultant chemical and electrical properties were investigated. The dissociation energies for Si-H and Ge-H surface monohydride bonds were determined, showing that H chemisorption on Si is energetically stable with respect H{sub 2} gas whereas H chemisorption on Ge is not. Cavity walls in Si were found to trap transition metals strongly, suggesting application to impurity gettering in devices. Measurement and modeling of cavity electrical properties elucidated surface electronic states and indicated a potential for controlled electrical isolation in devices. 35 refs.

Physical Description

23 p.

Creation Information

Myers, S.M.; Follstaedt, D.M.; Petersen, G.A.; Seager, C.H.; Stein, H.J. & Wampler, W.R. December 31, 1994.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Cavities were formed in Si and Ge by He ion implantation and annealing, and resultant chemical and electrical properties were investigated. The dissociation energies for Si-H and Ge-H surface monohydride bonds were determined, showing that H chemisorption on Si is energetically stable with respect H{sub 2} gas whereas H chemisorption on Ge is not. Cavity walls in Si were found to trap transition metals strongly, suggesting application to impurity gettering in devices. Measurement and modeling of cavity electrical properties elucidated surface electronic states and indicated a potential for controlled electrical isolation in devices. 35 refs.

Physical Description

23 p.

Notes

OSTI as DE95006812

Source

  • 9. international conference on ion beam modification of materials, Canberra (Australia), 5-10 Feb 1995

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Identifier

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  • Other: DE95006812
  • Report No.: SAND--94-2299C
  • Report No.: CONF-950220--4
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/28206 | External Link
  • Office of Scientific & Technical Information Report Number: 28206
  • Archival Resource Key: ark:/67531/metadc670433

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • December 31, 1994

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

Description Last Updated

  • April 14, 2016, 7:28 p.m.

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Myers, S.M.; Follstaedt, D.M.; Petersen, G.A.; Seager, C.H.; Stein, H.J. & Wampler, W.R. Chemical and electrical properties of cavities in silicon and germanium, report, December 31, 1994; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc670433/: accessed November 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.