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TEOS surface chemistry on SiO{sub 2} at CVD temperatures and pressures

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Description

We have developed a significantly improved understanding of thermal TEOS (tetraethylorthosilicate, Si(OCH{sub 2}CH{sub 3}){sub 4}) surface chemistry at CVD (chemical vapor deposition) temperatures and pressures. This was accomplished using GCMS (gas chromatography-mass spectroscopy) and FTIR (Fourier transform infrared spectroscopy) to examine how TEOS reaction rates are influenced by factors critical to the heterogeneous reaction. This included determining the TEOS pressure dependence, testing if reaction by-products inhibit TEOS decomposition, evaluating functional groups on the SiO{sub 2} surface as potential reaction sites, and establishing the functional group coverage dependencies. Our results show that TEOS decomposition rates are first-order in TEOS pressure and ... continued below

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8 p.

Creation Information

Bartrarm, M.E. & Moffat, H.K. December 31, 1995.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

We have developed a significantly improved understanding of thermal TEOS (tetraethylorthosilicate, Si(OCH{sub 2}CH{sub 3}){sub 4}) surface chemistry at CVD (chemical vapor deposition) temperatures and pressures. This was accomplished using GCMS (gas chromatography-mass spectroscopy) and FTIR (Fourier transform infrared spectroscopy) to examine how TEOS reaction rates are influenced by factors critical to the heterogeneous reaction. This included determining the TEOS pressure dependence, testing if reaction by-products inhibit TEOS decomposition, evaluating functional groups on the SiO{sub 2} surface as potential reaction sites, and establishing the functional group coverage dependencies. Our results show that TEOS decomposition rates are first-order in TEOS pressure and independent of the surface reaction by-products and the relative coverages of siloxane bridges (Si-O-Si) and hydroxyls on SiO{sub 2}. These conclusions suggest that a precise knowledge of functional group coverages on SiO{sub 2} is not essential for modeling thermal TEOS decomposition rates at 1000K. In the absence of gas-phase reactions, growth rates should be directly proportional to TEOS pressure. Therefore, it is likely that non-uniform SiO{sub 2} depositions observed in thermal TEOS CVD are due to depletion of TEOS in the gas-phase and/or thermal gradients on the surface.

Physical Description

8 p.

Notes

OSTI as DE96004680

Source

  • 189. meeting of the Electrochemical Society (ECS), Los Angeles, CA (United States), 5-10 May 1996

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  • Other: DE96004680
  • Report No.: SAND--95-1970C
  • Report No.: CONF-960502--1
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 221039
  • Archival Resource Key: ark:/67531/metadc670333

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • December 31, 1995

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

Description Last Updated

  • April 14, 2016, 7:08 p.m.

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Bartrarm, M.E. & Moffat, H.K. TEOS surface chemistry on SiO{sub 2} at CVD temperatures and pressures, article, December 31, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc670333/: accessed January 24, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.