Soft X-ray spectromicroscopy and its application to semiconductor microstructure characterization

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Description

The universal trend towards device miniaturization has driven the semiconductor industry to develop sophisticated and complex instrumentation for the characterization of microstructures. Many significant problems of relevance to the semiconductor industry cannot be solved with conventional analysis techniques, but can be addressed with soft x-ray spectromicroscopy. An active spectromicroscopy program is being developed at the Advanced Light Source, attracting both the semiconductor industry and the materials science academic community. Examples of spectromicroscopy techniques are presented. An ALS {mu}-XPS spectromicroscopy project is discussed, involving the first microscope completely dedicated and designed for microstructure analysis on patterned silicon wafers.

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25 pages

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Gozzo, F.; Franck, K.; Howells, M.R. & Hussain, Z. May 1, 1996.

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Description

The universal trend towards device miniaturization has driven the semiconductor industry to develop sophisticated and complex instrumentation for the characterization of microstructures. Many significant problems of relevance to the semiconductor industry cannot be solved with conventional analysis techniques, but can be addressed with soft x-ray spectromicroscopy. An active spectromicroscopy program is being developed at the Advanced Light Source, attracting both the semiconductor industry and the materials science academic community. Examples of spectromicroscopy techniques are presented. An ALS {mu}-XPS spectromicroscopy project is discussed, involving the first microscope completely dedicated and designed for microstructure analysis on patterned silicon wafers.

Physical Description

25 pages

Notes

OSTI as DE00285450

Source

  • 3. international school and symposium on synchrotron radiation in natural science, Bielsko-Biala (PL), 05/31/1996--06/08/1996; Other Information: Supercedes report DE96014049; PBD: May 1996

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  • Other: DE96014049
  • Report No.: LBNL--38899
  • Report No.: CONF-960520--1
  • Report No.: LBNL/ALS--356
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 285450
  • Archival Resource Key: ark:/67531/metadc670133

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • May 1, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • Nov. 25, 2015, 2:57 p.m.

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Gozzo, F.; Franck, K.; Howells, M.R. & Hussain, Z. Soft X-ray spectromicroscopy and its application to semiconductor microstructure characterization, article, May 1, 1996; United States. (digital.library.unt.edu/ark:/67531/metadc670133/: accessed September 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.