Defects and impurities in mercuric iodine processing Metadata

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Title

  • Main Title Defects and impurities in mercuric iodine processing

Creator

  • Author: van Scyoc, J.M.
    Creator Type: Personal
  • Author: James, R.B.
    Creator Type: Personal
    Creator Info: Sandia National Labs., Livermore, CA (United States)
  • Author: Schlesinger, T.E.
    Creator Type: Personal
  • Author: Gilbert, T.S.
    Creator Type: Personal
    Creator Info: Carnegie-Mellon Univ., Pittsburgh, PA (United States)

Contributor

  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization
    Contributor Info: USDOE, Washington, DC (United States)

Publisher

  • Name: Sandia National Laboratories
    Place of Publication: Livermore, California
    Additional Info: Sandia National Labs., Livermore, CA (United States)

Date

  • Creation: 1996-03-01

Language

  • English

Description

  • Content Description: In the fabrication of mercuric iodide HgI{sub 2} room temperature radiation detectors, as in any semiconductor process, the quality of the final device is very sensitive to the impurities and defects present. Each process step can change the effects of existing defects, reduce the number of defects, or introduce new defects. In HgI{sub 2} detectors these defects act as trapping and recombination centers, thereby degrading immediate performance and leading to unstable devices. In this work we characterized some of the defects believed to strongly affect detector operation. Specifically, we studied impurities that are known to be present in typical HgI{sub 2} materials. Leakage current measurements were used to study the introduction and characteristics of these impurities, as such experiments reveal the mobile nature of these defects. In particular, we found that copper, which acts as a hole trap, introduces a positively charged center that diffuses and drifts readily in typical device environments. These measurements suggest that Cu, and related impurities like silver, may be one of the leading causes of HgI{sub 2} detector failures.
  • Physical Description: 7 p.

Subject

  • Keyword: Copper
  • Keyword: Impurities
  • Keyword: Mercury Iodides
  • Keyword: Failures
  • Keyword: Hgi2 Semiconductor Detectors
  • STI Subject Categories: 44 Instrumentation, Including Nuclear And Particle Detectors
  • Keyword: Performance

Source

  • Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 17-21 Apr 1995

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Other: DE96006482
  • Report No.: SAND--96-8475C
  • Report No.: CONF-950412--64
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 207058
  • Archival Resource Key: ark:/67531/metadc670065

Note

  • Display Note: OSTI as DE96006482