Complementary HFET technology for low-power mixed-mode applications

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Development of a complementary heterostructure field effect transistor (CHFET) technology for low-power, mixed-mode digital-microwave applications is presented. An earlier digital CHFET technology with independently optimizable transistors which operated with 319 ps loaded gate delays at 8.9 fJ is reviewed. Then work demonstrating the applicability of the digital nJFET device as a low-power microwave transistor in a hybrid microwave amplifier without any modification to the digital process is presented. A narrow band amplifier with a 0.7 {times} 100 {micro}m nJFET as the active element was designed, constructed, and tested. At 1 mW operating power, the amplifier showed 9.7 dB of gain ... continued below

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11 p.

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Baca, A.G.; Sherwin, M.E.; Zolper, J.C.; Dubbert, D.F.; Hietala, V.M.; Shul, R.J. et al. June 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Development of a complementary heterostructure field effect transistor (CHFET) technology for low-power, mixed-mode digital-microwave applications is presented. An earlier digital CHFET technology with independently optimizable transistors which operated with 319 ps loaded gate delays at 8.9 fJ is reviewed. Then work demonstrating the applicability of the digital nJFET device as a low-power microwave transistor in a hybrid microwave amplifier without any modification to the digital process is presented. A narrow band amplifier with a 0.7 {times} 100 {micro}m nJFET as the active element was designed, constructed, and tested. At 1 mW operating power, the amplifier showed 9.7 dB of gain at 2.15 GHz and a minimum noise figure of 2.5 dB. In addition, next generation CHFET transistors with sub 0.5 {micro}m gate lengths were developed. Cutoff frequencies, f{sub t} of 49 GHz and 11.5 GHz were achieved for n- and p-channel FETs with 0.3 and 0.4 {micro}m gates, respectively. These FETs will enable both digital and microwave circuits with enhanced performance.

Physical Description

11 p.

Notes

OSTI as DE96010523

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  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996

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  • Other: DE96010523
  • Report No.: SAND--96-1174C
  • Report No.: CONF-960401--40
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 244632
  • Archival Resource Key: ark:/67531/metadc669732

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • June 1, 1996

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • April 14, 2016, 8:19 p.m.

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Baca, A.G.; Sherwin, M.E.; Zolper, J.C.; Dubbert, D.F.; Hietala, V.M.; Shul, R.J. et al. Complementary HFET technology for low-power mixed-mode applications, article, June 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc669732/: accessed November 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.