Direct observation and measurements of neutron induced deep levels responsible for N{sub eff} changes in high resistivity silicon detectors using TCT

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Neutron induced deep levels responsible for changes of space charge concentration {ital N{sub eff}} in high resistivity silicon detectors have been observed directly using the transient current technique (TCT). It has been observed by TCT that the absolute value and sign of {ital N{sub eff}} experience changes due to the trapping of non- equilibrium free carriers generated near the surface (about 5 micrometers depth into the silicon) by short wavelength laser pulses in fully depleted detectors. Electron trapping causes {ital N{sub eff}} to change toward negative direction (or more acceptor-like space charges) and hole trapping causes {ital N{sub eff}} to ... continued below

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24 p.

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Li, Z.; Li, C.J.; Eremin, V. & Verbitskaya, E. March 1, 1996.

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Description

Neutron induced deep levels responsible for changes of space charge concentration {ital N{sub eff}} in high resistivity silicon detectors have been observed directly using the transient current technique (TCT). It has been observed by TCT that the absolute value and sign of {ital N{sub eff}} experience changes due to the trapping of non- equilibrium free carriers generated near the surface (about 5 micrometers depth into the silicon) by short wavelength laser pulses in fully depleted detectors. Electron trapping causes {ital N{sub eff}} to change toward negative direction (or more acceptor-like space charges) and hole trapping causes {ital N{sub eff}} to change toward positive direction (or more donor-like space charges). The specific temperature associated with these {ital N{sub eff}} changes are those of the frozen-up temperatures for carrier emission of the corresponding deep levels. The carrier capture cross sections of various deep levels have been measured directly using different free carrier injection schemes. 10 refs., 12 figs., 3 tabs.

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24 p.

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OSTI as DE96009256

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  • International conference on radiation effects on semiconductor materials, detectors, and devices, Florence (Italy), 6-8 Mar 1996

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  • Other: DE96009256
  • Report No.: BNL--62981
  • Report No.: CONF-9603156--2
  • Grant Number: AC02-76CH00016
  • Office of Scientific & Technical Information Report Number: 228485
  • Archival Resource Key: ark:/67531/metadc669633

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  • March 1, 1996

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  • June 29, 2015, 9:42 p.m.

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  • Nov. 30, 2015, 7:36 p.m.

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Li, Z.; Li, C.J.; Eremin, V. & Verbitskaya, E. Direct observation and measurements of neutron induced deep levels responsible for N{sub eff} changes in high resistivity silicon detectors using TCT, article, March 1, 1996; Upton, New York. (digital.library.unt.edu/ark:/67531/metadc669633/: accessed December 14, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.